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W3H32M64EA-400SBM 参数 Datasheet PDF下载

W3H32M64EA-400SBM图片预览
型号: W3H32M64EA-400SBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX64, CMOS, PBGA208, 16 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 27 页 / 1197 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H32M64EA-XSBX  
ADVANCED  
WR values of 2, 3, 4, 5, or 6 clocks may be used for programming  
bits M9–M11. The user is required to program the value of WR,  
which is calculated by dividing WR (in ns) by tCK (in ns) and  
TABLE 2 – BURST DEFINITION  
Order of Accesses Within a Burst  
Burst  
Length  
Starting Column  
Address  
t
Type = Sequential  
Type = Interleaved  
rounding up a non integer value to the next integer; WR [cycles] =  
A1  
0
A0  
t
WR [ns] / tCK [ns]. Reserved states should not be used as unknown  
operation or incompatibility with future versions may result.  
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
4
0
POWER-DOWN MODE  
1
0
Active power-down (PD) mode is dened by bit M12, as shown  
in Figure 5. PD mode allows the user to determine the active  
power-down mode, which determines performance versus power  
savings. PD mode bit M12 does not apply to precharge PD mode.  
1
1
A2  
0
A1  
0
A0  
0
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
0
0
1
When bit M12 = 0, standard active PD mode or “fast-exit” active PD  
mode is enabled. The tXARD parameter is used for fast-exit active  
PD exit timing. The DLL is expected to be enabled and running  
during this mode.  
0
1
0
8
0
1
1
1
0
0
1
0
1
When bit M12 = 1, a lower-power active PD mode or “slow-exit”  
active PD mode is enabled. The tXARD parameter is used for slow-  
exit active PD exit timing. The DLL can be enabled, but “frozen”  
during active PD mode since the exit-to-READ command timing is  
relaxed. The power difference expected between PD normal and  
PD low-power mode is dened in the ICC table.  
1
1
0
1
1
1
NOTES:  
1. For a burst length of two, A1-Ai select two-data-element block; A0 selects the starting column  
within the block.  
2. For a burst length of four, A2-Ai select four-data-element block; A0-1 select the starting column  
within the block.  
3. For a burst length of eight, A3-Ai select eight-data-element block; A0-2 select the starting  
column within the block.  
4. Whenever a boundary of the block is reached within a given sequence above, the following  
access wraps within the block.  
OPERATING MODE  
The normal operating mode is selected by issuing a command  
with bit M7 set to “0,” and all other bits set to the desired values,  
as shown in Figure 5. When bit M7 is “1,” no other bits of the  
mode register are programmed. Programming bit M7 to “1” places  
the DDR2 SDRAM into a test mode that is only used by the  
manufacturer and should not be used. No operation or functionality  
is guaranteed if M7 bit is ‘1.’  
DLL RESET  
DLL RESET is defined by bit M8, as shown in Figure 5.  
Programming bit M8 to “1” will activate the DLL RESET function.  
Bit M8 is self-clearing, meaning it returns back to a value of “0”  
after the DLL RESET function has been issued.  
Anytime the DLL RESET function is used, 200 clock cycles must  
occur before a READ command can be issued to allow time for the  
internal clock to be synchronized with the external clock. Failing  
to wait for synchronization to occur may result in a violation of the  
t
AC or tDQSCK parameters.  
WRITE RECOVERY  
Write recovery (WR) time is dened by bits M9–M11, as shown in  
Figure 5. The WR register is used by the DDR2 SDRAM during  
WRITE with auto precharge operation. During WRITE with auto  
precharge operation, the DDR2 SDRAM delays the internal auto  
precharge operation by WR clocks (programmed in bits M9–M11)  
from the last data burst.  
Microsemi Corporation reserves the right to change products or specications without notice.  
August 2011 © 2011 Microsemi Corporation. All rights reserved.  
Rev.1  
9
Microsemi Corporation • (602) 437-1520 • www.microsemi.com