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W3H128M72E-400NBM 参数 Datasheet PDF下载

W3H128M72E-400NBM图片预览
型号: W3H128M72E-400NBM
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 128MX72, 1.35ns, CMOS, PBGA208, BGA-208]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 31 页 / 1024 K
品牌: MERCURY [ MERCURY UNITED ELECTRONICS INC ]
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W3H128M72E-XSBX / W3H128M72E-XNBX  
POSTED CAS ADDITIVE LATENCY (AL)  
Posted CAS additive latency (AL) is supported to make the  
command and data bus efcient for sustainable bandwidths in  
DDR2 SDRAM. Bits E3–E5 dene the value of AL, as shown in  
Figure 7. Bits E3–E5 allow the user to program the DDR2 SDRAM  
with an AL of 0, 1, 2, 3, 4, 5 or 6 clocks. Reserved states should  
not be used as unknown operation or incompatibility with future  
versions may result.  
In this operation, the DDR2 SDRAM allows a READ or WRITE  
command to be issued prior to tRCD (MIN) with the requirement  
that AL tRCD (MIN). A typical application using this feature would  
set AL = tRCD (MIN) - 1x tCK. The READ or WRITE command is  
held for the time of the AL before it is issued internally to the  
DDR2 SDRAM device. RL is controlled by the sum of AL and CL;  
RL = AL+CL. Write latency (WL) is equal to RL minus one clock;  
WL = AL + CL - 1 x tCK  
.
FIGURE 8 – EXTENDED MODE REGISTER 2 (EMR2) DEFINITION  
BA2  
BA1 BA0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0  
Address bus  
Extended mode  
register (Ex)  
16 15 14 13 12 11 10  
9
0
8
0
7
SRT  
6
0
5
0
4
0
3
0
2
0
1
0
0
0
0
MRS  
0
0
0
0
E7  
0
SRT Enable  
1X refresh rate (+85°C max junction temp.)  
1
2X refresh rate (+85°C to +95°C junction temp.)  
E15 E14  
Mode Register Set  
Mode register (MR)  
0
0
1
1
0
1
0
1
Extended mode register (EMR)  
Extended mode register (EMR2)  
Extended mode register (EMR3)  
12  
4163.12E-0716-ss-W3H128M72E-XSBX / XNBX  
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com  
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