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MX25L1635DMI-12G 参数 Datasheet PDF下载

MX25L1635DMI-12G图片预览
型号: MX25L1635DMI-12G
PDF下载: 下载PDF文件 查看货源
内容描述: 16M - BIT [ ×1 / ×2 / ×4 ] CMOS串行闪存 [16M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 50 页 / 728 K
品牌: Macronix [ MACRONIX INTERNATIONAL ]
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MX25L1635D  
(9) 4 x I/O Read Mode (4READ)  
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status Register  
mustbesetto"1"beforesedingthe4READinstruction.TheaddressislatchedonrisingedgeofSCLK, anddataofevery  
four bits(interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ. The first address can  
be at any location. The address is automatically increased to the next higher address after each byte data is shifted out,  
sothewholememorycanbereadoutatasingle4READinstruction.Theaddresscounterrollsoverto0whenthehighest  
addresshasbeenreached. Oncewriting4READinstruction, thefollowingaddress/dummy/dataoutwillperformas4-bit  
instead of previous 1-bit.  
The sequence of issuing 4READ instruction is: CS# goes lowsending 4READ instruction24-bit address interleave  
on SIO3, SIO2, SIO1 & SIO06 dummy cycles data out interleave on SIO3, SIO2, SIO1 & SIO0to end 4READ  
operation can use CS# to high at any time during data out (see Figure 17 for 4 x I/O Read Mode Timing Waveform).  
Anothersequenceofissuing4READinstructionespeciallyusefulinrandomaccessis:CS#goeslowsending4READ  
instruction24-bitaddressinterleaveonSIO3, SIO2, SIO1&SIO0performanceenhancetogglingbitP[7:0]4dummy  
cyclesdataoutinterleaveonSIO3,SIO2,SIO1andSIO0tillCS#goeshighCS#goeslow(reduce4Readinstruction)  
24-bit random access address (see figure 18 for 4x I/O read enhance performance mode timing waveform).  
Intheperformance-enhancingmode(NoteofFigure.18),P[7:4]mustbetogglingwithP[3:0];likewiseP[7:0]=A5h,5Ah,F0h  
or0Fhcanmakethismodecontinueandreducethenext4READinstruction.OnceP[7:4]isnolongertogglingwithP[3:0];  
likewiseP[7:0]=FFh,00h,AAhor55h. AndafterwardsCS#israisedorissuingFFcommand(CS#goeshigh->CS#goes  
low->sending0xFF->CS#goeshigh)insteadofnotoggling,thesystemthenwillescapefromperformanceenhancemode  
and return to normal opertaion.In these cases,tSHSL=15ns(min) will be specified.  
WhileProgram/Erase/WriteStatusRegistercycleisinprogress,4READinstructionisrejectedwithoutanyimpactonthe  
Program/Erase/Write Status Register current cycle.  
(10) Sector Erase (SE)  
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for any  
4K-bytesector. AWriteEnable(WREN)instructionmustexecutetosettheWriteEnableLatch(WEL)bitbeforesending  
the Sector Erase (SE). Any address of the sector (see table 3) is a valid address for Sector Erase (SE) instruction. The  
CS# must go high exactly at the byte boundary (the eighth bit of last address byte been latched-in); otherwise, the  
instruction will be rejected and not executed.  
Address bits [Am-A12] (Am is the most significant address) select the sector address.  
The sequence of issuing SE instruction is: CS# goes low -> sending SE instruction code-> 3-byte address on SI -> CS#  
goes high. (see Figure 22)  
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in Progress  
(WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the tSE timing, and  
sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the page is protected by  
BP3, BP2, BP1, BP0 bits, the Sector Erase (SE) instruction will not be executed on the page.  
(11)BlockErase(BE)  
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for 64K-  
byteblockeraseoperation.AWriteEnable(WREN)instructionmustexecutetosettheWriteEnableLatch(WEL)bitbefore  
P/N:PM1374  
REV. 1.5, OCT. 01, 2008  
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