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MAX770CSA 参数 Datasheet PDF下载

MAX770CSA图片预览
型号: MAX770CSA
PDF下载: 下载PDF文件 查看货源
内容描述: 5V / 12V / 15V或可调,高效率,低IQ ,升压型DC-DC控制器 [5V/12V/15V or Adjustable, High-Efficiency, Low IQ, Step-Up DC-DC Controllers]
分类和应用: 开关光电二极管信息通信管理控制器
文件页数/大小: 20 页 / 207 K
品牌: MAXIM [ MAXIM INTEGRATED PRODUCTS ]
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5 V/1 2 V/1 5 V o r Ad ju s t a b le , High-Effic ie nc y,  
Low I , Ste p-Up DC-DC Controlle rs  
Q
I
C(PEAK)  
L
MAX770  
MAX771  
MAX772  
MAX773  
I
B
R
BASE  
NPN  
EXTH  
EXTL  
CS  
EXT  
CS  
N
R
SENSE  
R
SENSE  
Figure 8a. Use an N-Channel MOSFET with the  
MAX770/MAX771/MAX772  
Figure 8c. Using an NPN Transistor with the MAX773  
0–MAX73  
preferably under 20m. To minimize radiated noise,  
use a toroid, a pot core, or a shielded coil.  
L
Table 2 lists inductor suppliers and specific recom-  
mended inductors.  
MAX773  
P o w e r Tra n s is t o r S e le c t io n  
Use an N-channel MOSFET power transistor with the  
MAX770/MAX771/MAX772 (Figure 8a).  
N
EXTH  
EXTL  
CS  
Use an N-FET whenever possible with the MAX773. An  
NPN transistor can be used, but be extremely careful  
whe n d e te rmining the b a s e c urre nt (s e e NPN  
Transistors section). An NPN transistor is not recom-  
mended when using the shunt regulator.  
R
SENSE  
Figure 8b. Using an N-Channel MOSFET with the MAX773  
N-Channel MOSFETs  
To ensure the external N-channel MOSFET (N-FET) is  
turne d on ha rd , us e log ic -le ve l or low-thre s hold  
N-FETs when the input drive voltage is less than 8V. This  
applies even in bootstrapped mode, to ensure start-up.  
The standard operating circuits use a 22µH inductor.  
If a d iffe re nt ind uc ta nc e va lue is d e s ire d , s e le c t L  
such that:  
N-FETs provide the highest efficiency because they do  
not draw any DC gate-drive current, but they are typi-  
cally more expensive than NPN transistors. When using  
an N-FET with the MAX773, connect EXTH and EXTL to  
the N-FETs gate (Figure 8b).  
V (max) x t (min)  
IN  
ON  
L ——————————  
/2  
I
LIM  
Larger inductance values tend to increase the start-up  
time slightly, while smaller inductance values allow the  
c oil c urre nt to ra mp up to hig he r le ve ls b e fore the  
switch turns off, increasing the ripple at light loads.  
When selecting an N-FET, three important parameters  
are the total gate charge (Q ), on resistance (r  
),  
g
DS(ON)  
and reverse transfer capacitance (C  
).  
RSS  
Inductors with a ferrite core or equivalent are recom-  
mended; powder iron cores are not recommended for  
use with high switching frequencies. Make sure the  
inductors saturation current rating (the current at which  
the core begins to saturate and the inductance starts to  
Q
takes into account all capacitances associated with  
g
charging the gate. Use the typical Q value for best  
g
results; the maximum value is usually grossly over-  
specified since it is a guaranteed limit and not the mea-  
sured value. The typical total gate charge should be  
50nC or less. With larger numbers, the EXT pins may  
not b e a ble to a de qua te ly drive the ga te . The EXT  
rise/fall time with various capacitive loads as shown in  
the Typical Operating Characteristics.  
fall) exceeds the peak current rating set by R  
.
SENSE  
However, it is generally acceptable to bias the inductor  
into saturation by approximately 20% (the point where  
the inductance is 20% below the nominal value). For  
highest efficiency, use a coil with low DC resistance,  
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