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LTC1698IGN 参数 Datasheet PDF下载

LTC1698IGN图片预览
型号: LTC1698IGN
PDF下载: 下载PDF文件 查看货源
内容描述: 孤立的次级同步整流器器控制器 [Isolated Secondary Synchronous Rectifier Controller]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管
文件页数/大小: 24 页 / 1048 K
品牌: Linear [ Linear ]
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LTC1698  
W U U  
APPLICATIO S I FOR ATIO  
U
Iftheapplicationgeneratesabiggercurrentsensevoltage,  
a potential divider can be easily obtained by adding a  
resistor across C2. With this additional resistor, the volt-  
age sensed by the current comparator becomes:  
The RDS(ON) required for a given conduction loss can now  
be calculated by rearranging the relation P = I2R.  
PMAX(Q3) = IMAX2 RDS(ON)Q3 •DC(Q3)  
RDIV  
DIV + (2R6)  
PMAX(Q3)  
IMAX2 •DC(Q3)  
VRSENSE  
RDS(ON)Q3  
=
R
PMAX(Q4) = IMAX2 RDS(ON)Q4 •DC(Q4)  
An RC network formed by RCILM and CCILM between ICOMP  
and VOUT can be used to stabilize the current limit loop.  
Connecting the compensation network to VOUT minimizes  
output overshoot during start-up or short-circuit recov-  
ery. The RCILM and CCILM zero should be chosen to be well  
within the closed-loop crossover frequency. This pin can  
be left floating if current loop compensation is not re-  
quired.Theforwardconvertersecondarycurrentlimitfunc-  
tioncanbedisabledbyshortingISNSandISNSGND toground.  
PMAX(Q4)  
IMAX2 •DC(Q4)  
RDS(ON)Q4  
=
where IMAX is the maximum load current and PMAX is the  
allowable conduction loss.  
Inatypical2-transistorforwardconvertercircuit,theduty  
cycle is less than 50% to prevent the transformer core  
from saturating. This results in the duty cycle of Q4 being  
greater than that of Q3. Q4 will dissipate more power due  
to the higher duty cycle. A lower RDS(ON) MOSFET can be  
used for Q4. This will slow down the turn-on time of Q4  
since a lower RDS(ON) MOSFET will have a larger gate  
capacitance.  
Auxiliary 3.3V Logic Power Supply  
An internal P-channel LDO (low dropout regulator) pro-  
duces the 3.3V auxiliary supply that can power external  
devices or drive the MARGIN pin. This supply can source  
up to 10mA of current and the current limit is provided  
internally. The pin requires at least a 0.1µF bypass  
capacitor.  
The next consideration for the MOSFET is the characteris-  
tic of the body diode. The body diodes conduct during the  
power-up phase, when the LTC1698 VDD supply is ramp-  
ing up and the time-out circuit is adapting to the SYNC  
input frequency. The CG and FG signals terminate prema-  
turely and the inductor current flows through the body  
diodes. The body diodes must be able to take the compa-  
rable amount of current as the MOSFETs. Most power  
MOSFETs have the same current rating for the body diode  
and the MOSFET itself.  
MOSFET Selection  
Two logic-level N-channel power MOSFETs (Q3 and Q4 in  
Figure 1) are required for most LTC1698 circuits. They are  
selected based primarily on the on-resistance and body  
diodeconsiderations.TherequiredMOSFETRDS(ON) should  
be determined based on input and output voltage, allow-  
able power dissipation and maximum required output  
current.  
The LTC1698 CG and FG MOSFET drivers will dissipate  
power. This will increase with higher switching frequency,  
higher VDD or larger MOSFETs. To calculate the driver  
dissipation, the total gate charge Qg is used. This param-  
eter is found on the MOSFET manufacturers data sheet.  
The power dissipated in each LTC1698 MOSFET driver is:  
The average inductor (L1) current is equal to the output  
load current. This current is always flowing through either  
Q3 or Q4 with the power dissipation split up according to  
the duty cycle:  
VOUT NP  
DC(Q3) =  
PDRIVER = Qg • VDD • fSW  
V
NS  
VOUT NP  
IN  
where fSW is the switching frequency of the converter.  
DC(Q4) = 1–  
V
IN  
NS  
where NP/NS is the turns ratio of the transformer T1.  
1698f  
15  
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