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LT8705 参数 Datasheet PDF下载

LT8705图片预览
型号: LT8705
PDF下载: 下载PDF文件 查看货源
内容描述: 80V的VIN和VOUT同步四开关降压 - 升压型DC / DC控制器 [80V VIN and VOUT Synchronous 4-Switch Buck-Boost DC/DC Controller]
分类和应用: 开关控制器
文件页数/大小: 44 页 / 569 K
品牌: Linear [ Linear ]
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LT8705  
APPLICATIONS INFORMATION  
To avoid subharmonic oscillations in the inductor current,  
choose the minimum inductance according to:  
2
Since maximum I R power dissipation in the boost region  
happens when V is minimum, we can determine the  
IN  
maximum allowable R  
for the boost region using:  
DS(ON)  
2  
V
IN(MIN) VOUT(MAX)  
VOUT  
V
R  
SENSE  
2
PM1 = P  
IOUT RDS(ON) ρ  
W
OUT(MAX)  
I R  
τ   
V
– V  
V
IN(MIN)   
OUT(MAX)  
IN  
L(MIN2,BOOST)  
=
=
H
0.08f  
2  
12V  
8V  
8V 12V  
12V 8V  
0.08350kHz  
1.3W ≅  
5A RDS(ON) 1.5 Wand therefore  
12V –  
8.7mΩ  
= –3.7µH  
RDS(ON) < 15.4mΩ  
VOUT(MAX)  
IN(MAX) – V  
V
IN(MAX) 1–  
R  
SENSE  
The Fairchild FDMS7672 meets the specifications with a  
maximum R of ~6.9mΩ at V = 4.5V (~10mΩ at  
V
OUT(MIN)   
L(MIN1,BUCK)  
=
DS(ON)  
GS  
0.12f  
125°C). Checking the power dissipation in the buck region  
with V maximum and V  
minimum yields:  
12V  
25V 12V  
IN  
OUT  
25V 1–  
8.7mΩ  
2
PM1 = PI R + PSWITCHING  
=
= 0.6µH  
0.08350kHz  
2  
VOUT  
The inductance must be higher than all of the minimum  
values calculated above. We will choose a 10μH standard  
value inductor for improved margin.  
IOUT RDS(ON) ρ + V I  
ftRF1 W  
(
)
IN  
OUT  
V
τ   
IN  
12V  
25V  
2  
PM1  
5A 6.9m1.5 + 25V 5A 350k 20ns  
(
)
MOSFET Selection: The MOSFETs are selected based on  
voltage rating, C  
and R  
value. It is important to  
RSS  
DS(ON)  
ensure that the part is specified for operation with the  
availablegatevoltageamplitude.Inthiscase,theamplitude  
= 0.06W+ 0.88W = 0.94W  
The maximum switching power of 0.88W can be reduced  
by choosing a slower switching frequency. Since this  
calculation is approximate, measure the actual rise and  
fall times on the PCB to obtain a better power estimate.  
is 6.35V and MOSFETs with an R  
value specified at  
DS(ON)  
V
GS  
= 4.5V can be used.  
Select M1 and M2: With 25V maximum input voltage,  
MOSFETs with a rating of at least 30V are used. As we do  
not yet know the actual thermal resistance (circuit board  
design and airflow have a major impact) we assume that  
the MOSFET thermal resistance from junction to ambient  
is 50°C/W.  
ThemaximumdissipationinM2occursatmaximuminput  
voltage when the circuit is operating in the buck region.  
Using the 6.9mΩ Fairchild FDMS7672 the dissipation is:  
V – V  
IN  
OUT  
P
IOUT(MAX)2 RDS(ON) ρτ  
W
(M2,BUCK)  
V
If we designfor amaximumjunction temperature, T  
IN  
J(MAX)  
=125°C,themaximumallowablepowerdissipationcanbe  
25V 12V  
25V  
calculated.First,calculatethemaximumpowerdissipation:  
P
5A 2 6.9m1.5 = 0.13W  
(
)
(M2,BUCK)  
T
J(MAX) TA(MAX)  
PD(MAX)  
=
=
RTH(JA)  
125°C60°C  
50°C/W  
PD(MAX)  
= 1.3W  
8705p  
38  
For more information www.linear.com/8705  
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