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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
Pin Description(Continued)  
Pin Name  
DESCRIPTION  
Data is input and output from these pins. These pins are the same as those of a  
conventional DRAM.  
DQ0 ~ DQ7  
(I/O pins)  
VCC and VCCQ  
(Power supply pins)  
3.3 V is applied. (VCC is for the internal circuit and VCCQ is for the output  
buffer.)  
VSS and VSSQ  
Ground is connected. (VSS is for the internal circuit and VSSQ is for the output  
(Power supply pins) buffer.)  
NC  
No Connection pins.  
Command Operation  
Command Truth Table  
The synchronous DRAM recognizes the following commands specified by the CS, RAS, CAS, WE  
and address pins.  
CKE  
A12~  
A13  
A0~  
A11  
Function  
Symbol  
CS RAS CAS WE  
A10  
n
n-1  
Ignore command  
No Operation  
DESL  
NOP  
H
H
H
H
H
H
H
H
H
H
H
H
X
H
L
L
L
L
L
L
L
L
L
L
L
X
H
H
H
H
H
H
L
X
H
H
L
L
L
L
H
H
H
L
L
X
H
L
H
H
L
L
H
L
L
H
L
X
X
X
V
V
V
V
V
V
X
X
V
X
X
X
L
X
X
X
V
V
V
V
V
X
X
X
V
X
X
X
X
X
X
X
X
X
V
X
BST  
Burst stop in full page  
Column address and  
read command  
READ  
READ A  
WRIT  
H
L
Read with auto-Precharge  
Column address and  
write command  
WRIT A  
ACTV  
PRE  
H
V
L
Write with auto-Precharge  
Row address strobe and  
bank active  
L
Precharge select bank  
Precharge all banks  
PALL  
L
H
X
V
REF/SELF  
MRS  
L
Refresh  
L
Mode register set  
* Notes : H: VIH, L: VIL, X: VIH or VIL, V: Valid address input  
4
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