欢迎访问ic37.com |
会员登录 免费注册
发布采购

GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
 浏览型号GM72V66841CT的Datasheet PDF文件第3页浏览型号GM72V66841CT的Datasheet PDF文件第4页浏览型号GM72V66841CT的Datasheet PDF文件第5页浏览型号GM72V66841CT的Datasheet PDF文件第6页浏览型号GM72V66841CT的Datasheet PDF文件第8页浏览型号GM72V66841CT的Datasheet PDF文件第9页浏览型号GM72V66841CT的Datasheet PDF文件第10页浏览型号GM72V66841CT的Datasheet PDF文件第11页  
LG Semicon  
GM72V66841CT/CLT  
DQM Truth Table  
CKE  
n-1  
Function  
Symbol  
DQM  
n
Write enable/output enable  
Write inhibit/output disable  
ENB  
H
H
X
X
L
MASK  
H
* Notes : H: VIH, L: VIL, X: VIH or VIL.  
Write : lDID is needed.  
Read : lDOD is needed.  
During writing, data is written by setting DQM to  
Low. When DQM is set to High, the previous  
data is held (the new data is not written). Desired  
data can be masked during burst read or burst  
write by setting DQM. For details, refer to the  
The GM72V66841CT/CLT can mask input/output  
data by means of DQM.  
During reading, the output buffer is set to Low-Z  
by setting DQM to Low, enabling data output. On  
the other hand, when DQM is set to High, the  
output buffer becomes High-Z, disabling data  
output.  
DQM  
control  
section  
of  
the  
GM72V66841CT/CLT operating instructions.  
6
 复制成功!