LG Semicon
GM72V66841CT/CLT
WRITE to WRITE Command Interval (different bank)
CLK
ACTV
Row 0
ACTV WRIT WRIT
Command
Address
(A0-A11)
Column A Column B
Row 1
BS(A12/A13)
Din
in A0
in B0
in B1
in B2
in B3
Burst Write Mode
Burst Length = 4
Bank0
Active
Bank3 Bank0 Bank3
Active Write Write
Read command to Write command interval:
read command, the write command can be
performed after an interval of no less than 1
cycle. However, DQM, DQMU/DQML must be
set High-Z so that the output buffer becomes
High-Z before data input.
1. Same bank, same Row address:
When the write command is executed at the same
ROW address of the same bank as the preceding
READ to WRITE Command Interval (1)
CLK
READ
WRIT
Command
CL=2
DQM,
DQMU
/DQML
CL=3
Din
in B0
in B1
in B2
in B3
High-Z
Dout
Burst Length = 4
Burst Write
27
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