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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
Write Command to Read Command Interval:  
However, in the case of a burst write, data will  
continue to be written until one cycle before the  
read command is executed.  
1. Same bank, same Row address: When the read  
command is executed at the same ROW address of  
the same bank as the preceding write command, the  
write command can be performed after an interval  
of no less than 1 cycle.  
WRITE to READ Command Interval (1)  
CLK  
WRIT  
in A0  
READ  
Command  
DQM,  
DQMU/DQML  
Din  
out B0  
out B1  
out B2  
out B3  
Dout  
CAS Latency  
Column=A  
Write  
Burst Write Mode  
Column=B  
Read  
Column=B  
Dout  
CAS Latency=2  
Burst Length = 4  
Bank0  
WRITE to READ Command Interval (2)  
CLK  
WRIT  
in A0  
READ  
Command  
DQM,  
DQMU/DQML  
in A1  
Din  
out B0  
out B1  
out B2  
out B3  
Dout  
CAS Latency  
Column=A  
Write  
Burst Write Mode  
CAS Latency=2  
Burst Length = 4  
Bank0  
Column=B  
Read  
Column=B  
Dout  
29  
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