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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
Command Intervals  
In the case of burst writes, the second write  
command has priority.  
Write command to Write command interval:  
1. Same bank, same ROW address:  
When another write command is executed at the  
same ROW address of the same bank as the  
preceding write command, the second write can  
be performed after an interval of no less than 1  
cycle.  
WRITE to WRITE Command Interval (same ROW address in same bank)  
CLK  
ACTV  
Row  
WRIT WRIT  
Command  
Address  
(A0-A11)  
Column A Column B  
BS(A12/A13)  
Din  
in A0  
in B0  
in B1  
in B2  
in B3  
Burst Write Mode  
Burst Length = 4  
Bank0  
Bank0  
Active  
Column=A Column=B  
Write Write  
2. Same bank, different ROW address:  
3. Different bank:  
When the ROW address changes, consecutive  
read commands cannot be executed; it is  
necessary to separate the two write commands  
with a Precharge command and a bank-active  
command.  
When the bank changes, the second write can be  
performed after an interval of no less than 1  
cycle, provided that the other bank is in the bank-  
active state. In the case of burst write, the second  
write command has priority.  
26  
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