欢迎访问ic37.com |
会员登录 免费注册
发布采购

GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
 浏览型号GM72V66841CT的Datasheet PDF文件第21页浏览型号GM72V66841CT的Datasheet PDF文件第22页浏览型号GM72V66841CT的Datasheet PDF文件第23页浏览型号GM72V66841CT的Datasheet PDF文件第24页浏览型号GM72V66841CT的Datasheet PDF文件第26页浏览型号GM72V66841CT的Datasheet PDF文件第27页浏览型号GM72V66841CT的Datasheet PDF文件第28页浏览型号GM72V66841CT的Datasheet PDF文件第29页  
LG Semicon  
GM72V66841CT/CLT  
Command Intervals  
Even when the first command is a burst read that  
is not yet finished, the data read by the second  
command will be valid.  
Read command to Read command interval:  
1. Same bank, same ROW address:  
When another read command is executed at the  
same ROW address of the same bank as the  
preceding read command execution, the second  
read can be performed after an interval of no less  
than 1 cycle.  
READ to READ Command Interval (Same Row Address in Same Bank)  
CLK  
ACTV  
Row  
READ READ  
Command  
Address  
(A0-A11)  
Column A Column B  
BS(A12/A13)  
Dout  
out A0 out B0 out B1 out B2 out B3  
Column=A Column=B  
Bank0  
Active  
Column=A Column=B  
CAS Latency =3  
Burst Length = 4  
Bank0  
Read  
Read  
Dout  
Dout  
2. Same bank, different ROW address:  
3. Different bank:  
When the ROW address changes on same bank,  
consecutive read commands cannot be executed;  
it is necessary to separate the two read commands  
with a Precharge command and a bank-active  
command.  
When the bank changes, the second read can be  
performed after an interval of no less than 1  
cycle, provided that the other bank is in the bank-  
active state. Even when the first command is a  
burst read that is not yet finished, the data read  
by the second command will be valid.  
24  
 复制成功!