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GM72V66841CT 参数 Datasheet PDF下载

GM72V66841CT图片预览
型号: GM72V66841CT
PDF下载: 下载PDF文件 查看货源
内容描述: 2,097,152字×8位×4银行同步动态RAM [2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 57 页 / 591 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon  
GM72V66841CT/CLT  
Auto Precharge  
Read with auto-Precharge: In this operation,  
since Precharge is automatically performed after  
The command executed for the same bank after  
the execution of this command must be the bank  
active (ACTV) command. In addition, an interval  
defined by lAPR is required before execution of the  
next command.  
completing  
a
read operation,  
a
Precharge  
command need not be executed after each read  
operation.  
CAS Latency  
Precharge start cycle  
2 cycle before the final data is output  
3
2
1 cycle before the final data is output  
Burst Read with Auto-Precharge  
CLK  
CL=2  
READ  
ACTV  
Command  
out 0  
out 1  
out 2  
out 3  
Dout  
lAPR  
CL=3  
Command  
READ  
ACTV  
out 0  
out 1  
out 2  
out 3  
Dout  
lAPR  
Note : Internal auto-Precharge starts at the timing indicated by "  
"
At CLK=50MHz (lAPR changes depending on the operating frequency.)  
20  
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