Specifications ispLSI 2128VE
Switching Test Conditions
Figure 2. Test Load
Input Pulse Levels
GND to 3.0V
≤ 1.5ns 10% to 90%
1.5V
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
+ 3.3V
R
1
1.5V
See Figure 2
Device
Output
Test
Point
3-state levels are measured 0.5V from steady-state active level.
Table 2 - 0003/2128VE
R
2
C *
L
Output Load Conditions (see Figure 2)
TEST CONDITION
R1
316Ω
∞
R2
CL
A
B
348Ω
348Ω
348Ω
35pF
35pF
35pF
*C includes Test Fixture and Probe Capacitance.
L
0213A/2128VE
Active High
Active Low
316Ω
Active High to Z
at VOH-0.5V
∞
348Ω
5pF
C
Active Low to Z
at VOL+0.5V
316Ω
348Ω
5pF
Table 2-0004/2128VE
DC Electrical Characteristics
Over Recommended Operating Conditions
3
SYMBOL
PARAMETER
Output Low Voltage
Output High Voltage
CONDITION
IOL= 8 mA
MIN.
–
TYP. MAX. UNITS
–
–
–
–
–
–
–
–
0.4
–
V
V
V
V
OL
IOH = -4 mA
2.4
–
OH
Input or I/O Low Leakage Current
0V ≤ V ≤ V (Max.)
-10
10
µA
µA
µA
µA
µA
mA
I
IL
IN
IL
(VCC - 0.2)V ≤ V ≤ VCC
–
IN
Input or I/O High Leakage Current
I
IH
VCC≤ VIN ≤ 5.25V
–
10
BSCAN Input Low Leakage Current
I/O Active Pull-Up Current
0V ≤ V ≤ V
–
-150
-150
-100
I
I
I
IL-isp
IL-PU
OS1
IN
IL
0V ≤ V ≤ V
–
IN
IL
Output Short Circuit Current
VCC= 3.3V, VOUT= 0.5V
–
V = 0.0V, V = 3.0V
CC2, 4
IL
IH
–
195
–
mA
Operating Power Supply Current
I
fCLOCK = 1 MHz
Table 2-0007/2128VE
1. One output at a time for a maximum duration of one second. VOUT = 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using eight 16-bit counters.
3. Typical values are at VCC= 3.3V and TA= 25°C.
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum ICC
.
4
LATTICE [ LATTICE SEMICONDUCTOR ]
