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IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS43R16320B  
IC43R16320B  
A Read command to the consecutive Precharge command interval (same bank): To output all data  
To complete a burst read operation and get a burst length of data, the consecutive precharge command must be  
issued tRPD (= BL/ 2 cycles) after the read command is issued.  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
t8  
CK  
/CK  
PRE/  
PALL  
Command  
DQ  
NOP  
NOP  
NOP  
READ  
out0 out1 out2 out3  
DQS  
tRPD = BL/2  
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4)  
READ to PRECHARGE Command Interval (same bank): To stop output data  
A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become High-Z tHZP  
(= CL) after the precharge command.  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
t8  
CK  
/CK  
PRE/PALL  
Command  
DQ  
NOP  
NOP  
READ  
CL = 3  
High-Z  
High-Z  
out0 out1  
DQS  
tHZP  
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 2, 4, 8)  
Integrated Silicon Solution, Inc. — www.issi.com  
37  
Rev. 00B  
06/11/08  
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