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IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS43R16320B  
IC43R16320B  
DM Control  
DM can mask input data. In ×16 products, UDM and LDM can mask the upper and lower byte of input data  
respectively. By setting DM to low, data can be written. When DM is set to high, the corresponding data is not  
written, and the previous data is held. The latency between DM input and enabling/disabling mask function is 0.  
t1  
t2  
t3  
t4  
t5  
t6  
DQS  
DQ  
Mask  
Mask  
DM  
Write mask latency = 0  
DM Control  
Self-Refresh  
The self-refresh command can be used to retain data in the DDR SDRAM, even if the rest of the system is powered  
down. When in the self-refresh mode, the DDR SDRAM retains data without external clocking. The self-refresh  
command is initiated like an auto-refresh command except CKE is disabled (low). The DLL is automatically disabled  
upon entering self-refresh, and is automatically enabled upon exiting self-refresh. Any time the DLL is enabled a  
DLL reset must follow and 200 clock cycles should occur before a read command can be issued. Input signals  
except CKE are “Don’t care” during self-refresh. Since CKE is an SSTL2 input, VREF must be maintained during  
self-refresh.  
The procedure for exiting self-refresh requires a sequence of commands. First, CK must be stable prior to CKE  
going back high. Once CKE is high, the DDR SDRAM must have NOP commands issued for tSNR because time is  
required for the completion of any internal refresh in progress. A simple algorithm for meeting both refresh and DLL  
requirements is to apply NOPs for 200 clock cycles before applying any other command.  
The use of self-refresh mode introduces the possibility that an internally timed event can be missed when CKE is  
raised for exit from self-refresh mode. Upon exit from self-refresh an extra auto-refresh command is recommended.  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
tm  
tn  
tCK  
tCH tCL  
/CK  
CK  
tSNR*3  
tSRD*2  
tRP*1  
tIS  
tIS  
CKE  
tIH  
tIS  
Command  
NOP  
NOP  
Valid  
SELF  
NOP  
Notes: 1. Device must be in the “All banks idle” state prior to entering self-refresh mode.  
2. tSRD is applied for a read or a read with autoprecharge command.  
3. tSNR is applied for any command except a read or a read with autoprecharge command.  
40  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. 00B  
06/11/08  
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