欢迎访问ic37.com |
会员登录 免费注册
发布采购

IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
 浏览型号IC43R16320B-6TL的Datasheet PDF文件第34页浏览型号IC43R16320B-6TL的Datasheet PDF文件第35页浏览型号IC43R16320B-6TL的Datasheet PDF文件第36页浏览型号IC43R16320B-6TL的Datasheet PDF文件第37页浏览型号IC43R16320B-6TL的Datasheet PDF文件第39页浏览型号IC43R16320B-6TL的Datasheet PDF文件第40页浏览型号IC43R16320B-6TL的Datasheet PDF文件第41页浏览型号IC43R16320B-6TL的Datasheet PDF文件第42页  
IS43R16320B  
IC43R16320B  
A Write command to the consecutive Precharge command interval (same bank)  
The minimum interval tWPD is necessary between the write command and the precharge command.  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
CK  
/CK  
Command  
PRE/PALL  
NOP  
WRIT  
NOP  
tWPD  
tWR  
DM  
DQS  
DQ  
in0  
in1  
in2  
in3  
Last data input  
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)  
Precharge Termination in Write Cycles  
During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command  
of the same bank. In order to write the last input data, tWR (min) must be satisfied. When the precharge command  
is issued, the invalid data must be masked by DM.  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
CK  
/CK  
Command  
PRE/PALL  
WRIT  
NOP  
NOP  
tWR  
DM  
DQS  
DQ  
in0  
in1  
Data masked  
Precharge Termination in Write Cycles (same bank) (BL = 4)  
38  
Integrated Silicon Solution, Inc. — www.issi.com  
Rev. 00B  
06/11/08  
 复制成功!