IS43R16320B
IC43R16320B
A Read command to the consecutive Write command interval with the BST command
Destination row of the consecutive write
command
Bank
address
Row address State
Operation
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
1. Same
Same
Different
Any
ACTIVE
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
2. Same
—
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
3. Different
ACTIVE
IDLE
Precharge the bank independently of the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued.
t0
t1
t2
t3
t4
t5
t6
t7
t8
CK
/CK
Command
READ
WRIT
BST
NOP
NOP
tBSTW (≥ tBSTZ)
DM
tBSTZ (= CL)
DQ
out0 out1
in0 in1 in2 in3
High-Z
DQS
OUTPUT
INPUT
BL = 4
CL = 3
READ to WRITE Command Interval
Integrated Silicon Solution, Inc. — www.issi.com
33
Rev. 00B
06/11/08
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
