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IC43R16320B-6TL 参数 Datasheet PDF下载

IC43R16320B-6TL图片预览
型号: IC43R16320B-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66]
分类和应用: 动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 48 页 / 839 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS43R16320B  
IC43R16320B  
A Write command to the consecutive Read command interval: To interrupt the write operation  
Destination row of the consecutive read  
command  
Bank  
Row address State  
Operation  
address  
1. Same  
DM must be input 1 cycle prior to the read command input to prevent from being  
written invalid data. In case, the read command is input in the next cycle of the  
write command, DM is not necessary.  
—*1  
Same  
Different  
Any  
ACTIVE  
2. Same  
DM must be input 1 cycle prior to the read command input to prevent from being  
written invalid data. In case, the read command is input in the next cycle of the  
write command, DM is not necessary.  
—*1  
3. Different  
ACTIVE  
IDLE  
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write  
operation in this case.  
WRITE to READ Command Interval (Same bank, same ROW address)  
t0  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
t8  
CK  
/CK  
Command  
WRIT  
READ  
NOP  
1 cycle  
CL=3  
DM  
High-Z  
High-Z  
DQ  
out0 out1 out2 out3  
in0 in1  
in2  
DQS  
BL = 4  
CL = 3  
Data masked  
[WRITE to READ delay = 1 clock cycle]  
Integrated Silicon Solution, Inc. — www.issi.com  
35  
Rev. 00B  
06/11/08  
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