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IC42S16400F-6TL 参数 Datasheet PDF下载

IC42S16400F-6TL图片预览
型号: IC42S16400F-6TL
PDF下载: 下载PDF文件 查看货源
内容描述: 1梅格位×16位× 4银行( 64兆位)同步动态RAM [1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 55 页 / 822 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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TIVEcommandwhichisthenfollowedbyaREADorWRITEꢀ  
                                             
IS42S16400F  
IC42S16400F  
FUNCTIONAL DESCRIPTION  
Initialization  
The64MbSDRAMs(1Megx16x4banks)arequad-bankꢀ  
DRAMsꢀwhichꢀoperateꢀatꢀ3.3Vꢀandꢀincludeꢀaꢀsynchronousꢀ  
interface (all signals are registered on the positive edge of  
theclocksignal,CLK).ꢀEachꢀofꢀtheꢀ16,777,216-bitꢀbanksꢀisꢀ  
organized as 4,096 rows by 256 columns by 16 bits.  
SDRAMsꢀ mustꢀ beꢀ poweredꢀ upꢀ andꢀ initializedꢀ inꢀ aꢀ  
predefined manner.  
Theꢀ64MꢀSDRAMꢀisꢀinitializedꢀafterꢀtheꢀpowerꢀisꢀappliedꢀ  
toꢀVD D ꢀandꢀVD D q (simultaneously), and the clock is stable  
withꢀDQMꢀHighꢀandꢀCKEꢀHigh.ꢀ  
ReadꢀandꢀwriteꢀaccessesꢀtoꢀtheꢀSDRAMꢀareꢀburstꢀoriented;ꢀ  
accesses start at a selected location and continue for  
a programmed number of locations in a programmed  
sequence. Accesses begin with the registration of an AC-  
A 100µs delay is required prior to issuing any command  
other than a COMMANDINHIBIT or a NOP.ꢀTheCOMMANDꢀ  
INHIBITorNOPmaybeappliedduringthe100µsperiodandꢀ  
continue should at least through the end of the period.  
WithꢀatꢀleastꢀoneꢀCOMMANDꢀINHIBITꢀorꢀNOPꢀcommandꢀ  
havingꢀbeenꢀapplied,ꢀaꢀPRECHARGEꢀcommandꢀshouldꢀ  
be applied once the 100µs delay has been satisfied. All  
banksꢀmustꢀbeꢀprecharged.ꢀꢀThisꢀwillꢀleaveꢀallꢀbanksꢀinꢀ  
an idle state, afterꢀwhichꢀatꢀleastꢀtwoꢀAUTOꢀREFRESH cycles  
must be performed. After the AUTOꢀREFRESH cycles are  
complete,ꢀ theꢀ SDRAMꢀ isꢀ thenꢀ readyꢀ forꢀ modeꢀ registerꢀ  
programming.  
command.Theꢀaddressꢀbitsꢀregisteredꢀcoincidentꢀwithꢀtheꢀ  
ACTIVEꢀcommandꢀareꢀusedꢀtoꢀselectꢀtheꢀbankꢀandꢀrowꢀtoꢀ  
be accessed (BA0ꢀandꢀBA1ꢀselectꢀtheꢀbank,ꢀA0-A11ꢀselectꢀtheꢀ  
row).Theaddressbits(A0-A7) registeredcoincidentwiththe  
READꢀorWRITEꢀcommandꢀareꢀusedꢀtoꢀselectꢀtheꢀstartingꢀ  
column location for the burst access.  
Priorꢀ toꢀ normalꢀ operation,ꢀ theꢀ SDRAMꢀ mustꢀ beꢀ initial-  
ized.ꢀTheꢀfollowingꢀsectionsꢀprovideꢀdetailedꢀinformationꢀ  
covering device initialization, register definition, command  
descriptions and device operation.  
Theꢀ modeꢀ registerꢀ shouldꢀ beꢀ loadedꢀ priorꢀ toꢀ applyingꢀ  
any operational command because it will power up in an  
unknownꢀstate.ꢀAfterꢀtheꢀLoadꢀModeꢀRegisterꢀcommand,ꢀ  
atleasttwoNOPcommandsmustbeassertedꢀpriorꢀtoꢀ  
any command.  
Integrated Silicon Solution, Inc. — www.issi.com  
15  
Rev. A  
03/19/08  
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