i
Self-RefreshꢀCurrentꢀ
CKEꢀ≤ꢀ0.2Vꢀ
ꢀ
ꢀ
—ꢀ
—ꢀ
2ꢀ
mA
IS42S16400F
IC42S16400F
DC ELECTRICAL CHARACTERISTICS (RecommendedꢀOperationꢀConditionsꢀunlessꢀotherwiseꢀnoted.)
Symbol Parameter
Test Condition
Speed Min.
Max.
Unit
i
ꢀꢀ
ilꢀ
InputꢀLeakageꢀCurrentꢀ
ꢀ
0Vꢀ≤ꢀViN ≤ꢀVD D , with pins other than
theꢀtestedꢀpinꢀatꢀ0V
–5
5
µA
i
o l
ꢀ
OutputꢀLeakageꢀCurrentꢀ
OutputꢀHighꢀVoltageꢀLevelꢀ
OutputꢀLowꢀVoltageꢀLevelꢀ
Outputꢀisꢀdisabled,ꢀ0Vꢀ≤ Vo u t ≤ꢀVD D
–5
5
µA
V
V
o h
ꢀ
ꢀ
i
o u t ꢀ=ꢀ–2ꢀmAꢀ
o u t ꢀ=ꢀ+2ꢀmAꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2.4ꢀ
—ꢀ
—ꢀ
0.4ꢀ
V
o l
ꢀ
i
V
i
ꢀꢀ
c c 1
OperatingꢀCurrent(1,2)
ꢀ
OneꢀBankꢀOperation,ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀCAS latency = 3 Com.
-5
-6ꢀ
-7ꢀ
-5
—
—ꢀ
—ꢀ
—
—
—ꢀ
—
—
—
—
110
95ꢀ
85ꢀ
180
155
145ꢀ
2
4
2
3
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
ꢀ
BurstꢀLength=1ꢀ
ꢀ
ꢀ
Com.ꢀ
Com.ꢀ
Ind.
tr c ≥ tr c ꢀ(min.)ꢀ
o u t = 0mA
I
Ind.
-6
ꢀꢀ
i
ꢀ
ꢀ
ꢀ
Ind.ꢀ
Com.
Ind.
Com.
Ind.
-7ꢀ
—
—
—
—
c c 2p
ꢀ
PrechargeꢀStandbyꢀCurrentꢀ CKEꢀ≤ Vil
(
m a x
)
tc k = 15ns
I
c c 2p s
(InꢀPower-DownꢀMode)
t
c k = ∞
i
I
c c 2N(3)ꢀ
c c 2N s
PrechargeꢀStandbyꢀCurrentꢀ CKEꢀ≥ Vih
(InꢀNonꢀPower-DownꢀMode)
(
m iN )
t
t
c k = 15ns
c k = ∞ꢀ
—
—
—
—
—
—
20
15
15
mA
mA
mA
Com.
Ind.
i
ꢀꢀ
i
c c 3p
ꢀ
ActiveꢀStandbyꢀCurrentꢀ
ꢀ
(InꢀPower-DownꢀMode)ꢀ
CKEꢀ≤ Vil
ꢀ
ꢀ
(
m a x
)
t
ꢀ
t
c k ꢀ=ꢀ10nsꢀ
Com.ꢀ
Ind.ꢀ
Com.
Ind.
—ꢀ
—ꢀ
—
—ꢀ
—ꢀ
—
7ꢀ
7ꢀ
5
mA
mA
mA
mA
c c 3p s
ꢀ
c k = ∞ꢀ
—
—
5
i
I
c c 3N(3)ꢀ
c c 3N s
ActiveꢀStandbyꢀCurrentꢀ
(InꢀNonꢀPower-DownꢀMode)
CKEꢀ≥ Vih
(
m iN )
t
t
c k = 15ns
c k = ∞ꢀ
—
—
—
—
—
—
30
25
25
mA
mA
mA
Com.
Ind.
i
c c 4
c c 5
c c 6
ꢀ
ꢀ
ꢀ
OperatingꢀCurrentꢀ
(InꢀBurstꢀMode)(1)
t
c k = tc k
(
m iN
)
CAS latency = 3 Com.
-5
—
140
mA
ꢀꢀ
I
o u t = 0mA
Com.
-6
-7ꢀ
—
—ꢀ
130
100ꢀ
mA
mA
BLꢀ=ꢀ4;ꢀ4ꢀbanksꢀactivatedꢀ
ꢀ
Com.ꢀ
Ind.
Ind.
Ind.ꢀ
-5
-6
-7ꢀ
—
—
—ꢀ
150
140
110ꢀ
mA
mA
mA
ꢀꢀ
ꢀ
ꢀ
ꢀ
i
Auto-RefreshꢀCurrentꢀ
tr c = tr c
(
m iN
)
CAS latency = 3Com.
-5
—
160
mA
tc l k = tc l k
(m iN
)
Com.
-6
-7ꢀ
—
—ꢀ
150
130ꢀ
mA
mA
ꢀꢀ
ꢀ
ꢀꢀ
ꢀ
Com.ꢀ
Ind.
Ind.ꢀ
Ind.ꢀ
-5
-6ꢀ
-7ꢀ
—
—ꢀ
—ꢀ
180
170ꢀ
150ꢀ
mA
mAꢀ
mA
ꢀꢀ
ꢀꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Notes:
1.ꢀ Theseꢀareꢀtheꢀvaluesꢀatꢀtheꢀminimumꢀcycleꢀtime.ꢀSinceꢀtheꢀcurrentsꢀareꢀtransient,ꢀtheseꢀvaluesꢀdecreaseꢀasꢀtheꢀcycleꢀtimeꢀin-
creases.ꢀAlsoꢀnoteꢀthatꢀaꢀbypassꢀcapacitorꢀofꢀꢀatꢀꢀleastꢀꢀ0.01ꢀµFꢀshouldꢀbeꢀinsertedꢀbetweenꢀVD D ꢀandꢀGNDꢀforꢀeachꢀmemoryꢀchipꢀ
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4ꢀdependꢀonꢀtheꢀoutputꢀload.ꢀTheꢀmaximumꢀvaluesꢀforꢀIcc1 and Icc4 are obtained with the output open state.
3. Input signal chnage once per 30ns.
12
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
03/19/08
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
