IS42S16400F
IC42S16400F
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VDD m a x ꢀ
VDDq m a x
ViNꢀ
Parameters
Rating
–1.0ꢀtoꢀ+4.6ꢀ
–1.0ꢀtoꢀ+4.6ꢀ
–1.0ꢀtoꢀVD D q +ꢀ0.5ꢀ
–1.0ꢀtoꢀVD D q +ꢀ0.5ꢀ
1ꢀ
Unit
V
V
V
V
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
MaximumꢀSupplyꢀVoltageꢀ
MaximumꢀSupplyꢀVoltageꢀforꢀOutputꢀBufferꢀ
InputꢀVoltageꢀ
OutputꢀVoltageꢀ
AllowableꢀPowerꢀDissipationꢀ
output Shorted Current
Vo u t ꢀ
PD m a x
Ic s
W
mA
50
ꢀ
ꢀ
To p r
operatingꢀTemperatureꢀ
Com.ꢀ
Ind.ꢀ
0ꢀtoꢀ+70ꢀ
-40ꢀtoꢀ+85ꢀ
–65ꢀtoꢀ+150ꢀ
°Cꢀ
°C
°C
Ts t g ꢀ
StorageꢀTemperatureꢀ
ꢀ
DC RECOMMENDED OPERATING CONDITIONS(2) (AtꢀTaꢀ=ꢀ0ꢀtoꢀ+70°C)
Symbol
VDD, VDDqꢀ
Vihꢀ
Parameter
Min.
3.0ꢀ
2.0ꢀ
-0.3ꢀ
Typ.
3.3ꢀ
—ꢀ
Max.
3.6ꢀ
VD D +ꢀ0.3ꢀ
+0.8ꢀ
Unit
V
V
ꢀ
ꢀ
ꢀ
SupplyꢀVoltageꢀ
InputꢀHighꢀVoltage(3)ꢀ
InputꢀLowꢀVoltage(4)ꢀ
Vilꢀ
—ꢀ
V
CAPACITANCE CHARACTERISTICS(1,2) (AtꢀTaꢀ=ꢀ0ꢀtoꢀ+25°C,ꢀVD D ꢀ=ꢀVD D q ꢀ=ꢀ3.3ꢀ±ꢀ0.3V,ꢀfꢀ=ꢀ1ꢀMHz)
Symbol
CiNꢀ
Parameter
Typ.
—ꢀ
—ꢀ
Max.
3.8ꢀ
3.5ꢀ
6.5ꢀ
Unit
pF
pF
InputꢀCapacitance:ꢀAddressꢀandꢀControlꢀ
InputꢀCapacitance:ꢀ(CLK)ꢀ
DataꢀInput/OutputꢀCapacitance:ꢀI/O0-I/O15ꢀ
Cc l k ꢀ
CI/Oꢀ
ꢀ
—ꢀ
pF
Notes:
1.ꢀ StressꢀgreaterꢀthanꢀthoseꢀlistedꢀunderꢀABSOLUTEꢀMAXIMUMꢀRATINGSꢀmayꢀcauseꢀpermanentꢀdamageꢀtoꢀtheꢀdevice.ꢀThisꢀisꢀaꢀ
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sectionsꢀofꢀthisꢀspecificationꢀisꢀnotꢀimplied.ꢀExposureꢀtoꢀabsoluteꢀmaximumꢀratingꢀconditionsꢀforꢀextendedꢀperiodsꢀmayꢀaffectꢀ
reliability.
2.ꢀ AllꢀvoltagesꢀareꢀreferencedꢀtoꢀGND.
3.ꢀꢀVih(max)ꢀ=ꢀVD D q ꢀ+ꢀ2.0Vꢀwithꢀaꢀpulseꢀwidthꢀ<ꢀ3ns.
4.ꢀꢀVil(min)ꢀ=ꢀGNDꢀ-ꢀ2.0Vꢀwithꢀaꢀpulseꢀwidthꢀ<ꢀ3ns.
Integrated Silicon Solution, Inc. — www.issi.com
11
Rev. A
03/19/08
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
