ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
Post Radiation Characteristics Unless otherwise specified, V = 4.75V to 5.5V for the ISL705AEH/BEH/CEH, V = 3.15V to 3.6V
DD
DD
for the ISL706AEH/BEH/CEH T = +25°C. This data is typical mean test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended
A
to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed
40
35
30
25
20
0.62
0.61
0.60
0.59
0.58
BIASED
GROUNDED
BIASED
GROUNDED
0
25
50
75
100
125
150
0
25
50
75
100
125
150
krad(Si)
krad(Si)
FIGURE 28. ISL706xEH t
vs LOW DOSE RATE RADIATION
FIGURE 29. ISL706xEH V
vs LOW DOSE RATE RADIATION
PFI
MD
20
15
40
35
30
GROUNDED
25
20
15
10
5
BIASED
10
5
BIASED
GROUNDED
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
krad(Si)
krad(Si)
FIGURE 30. ISL706xEH t
vs LOW DOSE RATE RADIATION
FIGURE 31. ISL706xEH t
vs LOW DOSE RATE RADIATION
FPFI
RPFI
FN8262.0
March 30, 2012
12
INTERSIL [ Intersil ]
