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5962R1121307V9A 参数 Datasheet PDF下载

5962R1121307V9A图片预览
型号: 5962R1121307V9A
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射, 5.0V / 3.3V μ处理器监控电路 [Rad-Hard, 5.0V/3.3V μ-Processor Supervisory Circuits]
分类和应用: 监控
文件页数/大小: 19 页 / 1152 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
for the ISL706AEH/BEH/CEH T
A
= +25°C. This data is parameter deltas post radiation exposure at a rate of 50 to 300rad(Si)/s. This data is intended to
show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.
SYMBOL
PARAMETER
CONDITIONS
0 - 25kRad
0 - 50kRad
0 - 75kRad
0 - 100kRad
UNITS
Post Radiation Characteristics
Unless otherwise specified, V
DD
= 4.75V to 5.5V for the ISL705AEH/BEH/CEH, V
DD
= 3.15V to 3.6V
POWER SUPPLY SECTION
IDD
Operating Supply Current
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
RESET SECTION
V
RST
Reset Threshold Voltage
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
V
HYS
Reset Threshold Voltage
Hysteresis
Reset Pulse Width
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
-8.1
-1
-3.75
0.375
-2.13
-13.1
-3.25
-1.9
0.25
-2.18
-17.5
-5.38
-5
0.625
-2.39
-18.1
-7.25
-3.12
0.625
-2.35
mV
mV
mV
mV
ms
-2
-4.79
-2.44
-7.47
-3.86
-6.93
-4.88
-8.88
µA
µA
t
RST
WATCHDOG SECTION
t
WD
Watchdog Time-Out Period
-56
-72
-81
-80
ms
MANUAL RESET SECTION
t
MD
Manual Reset (MR) to Reset
Out Delay
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
0.028
0.305
0.146
0.605
0.274
0.793
0.368
0.956
ns
ns
THRESHOLD DETECTOR SECTION
V
PFI
Power Fail Input (PFI) Input
Threshold Voltage
PFI Rising Threshold
Crossing to PFO Delay
PFI Falling Threshold
Crossing to PFO Delay
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
0.94
-1.56
-0.026
0.028
-0.397
-0.35
0.31
-2.5
-0.047
-0.058
-0.77
-0.782
0
-2.5
-0.085
0.11
-1.17
-1.516
-0.62
-2.5
-0.068
-0.11
-2.88
-2.087
mV
mV
µs
µs
µs
µs
t
RPFI
t
FPFI
for the ISL706AEH/BEH/CEH T
A
= +25°C. This data is typical mean test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended
to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed
540
530
520
I
DD
(µA)
500
490
480
470
460
450
0
25
50
GROUNDED
75
krad(Si)
100
125
150
BIASED
V
RST
(V)
510
4.80
4.75
4.70
4.65
4.60
4.55
4.50
4.45
0
25
50
75
krad(Si)
100
125
150
GROUNDED
BIASED
Post Radiation Characteristics
Unless otherwise specified, V
DD
= 4.75V to 5.5V for the ISL705AEH/BEH/CEH, V
DD
= 3.15V to 3.6V
FIGURE 14. ISL705xEH I
DD
vs LOW DOSE RATE RADIATION
FIGURE 15. ISL705xEH V
RST
vs LOW DOSE RATE RADIATION
9
FN8262.0
March 30, 2012