ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
Post Radiation Characteristics Unless otherwise specified, V = 4.75V to 5.5V for the ISL705AEH/BEH/CEH, V = 3.15V to 3.6V
DD
DD
for the ISL706AEH/BEH/CEH T = +25°C. This data is typical mean test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended
A
to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed
240
220
200
180
160
140
120
100
90
80
70
60
50
40
30
20
10
0
GROUNDED
BIASED
BIASED
GROUNDED
0
25
50
75
krad(Si)
100
125
150
0
25
50
75
100
125
150
krad(Si)
FIGURE 16. ISL705xEH V
vs LOW DOSE RATE RADIATION
FIGURE 17. ISL705xEH t
vs LOW DOSE RATE RADIATION
RST
HYS
2.0
1.8
1.6
1.4
40
35
30
25
20
GROUNDED
GROUNDED
BIASED
1.2
BIASED
1.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
krad(Si)
krad(Si)
FIGURE 18. ISL705xEH t
vs LOW DOSE RATE RADIATION
FIGURE 19. ISL705xEH t
vs LOW DOSE RATE RADIATION
MD
WD
1.500
1.375
1.250
1.125
1.000
10
8
BIASED
BIASED
6
4
GROUNDED
GROUNDED
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
krad(Si)
krad(Si)
FIGURE 20. ISL705xEH V
vs LOW DOSE RATE RADIATION
FIGURE 21. ISL705xEH t
vs LOW DOSE RATE RADIATION
RPFI
PFI
FN8262.0
March 30, 2012
10
INTERSIL [ Intersil ]
