ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
Post Radiation Characteristics Unless otherwise specified, V = 4.75V to 5.5V for the ISL705AEH/BEH/CEH, V = 3.15V to 3.6V
DD
DD
for the ISL706AEH/BEH/CEH T = +25°C. This data is typical mean test data post radiation exposure at a rate of <10mrad(Si)/s. This data is intended
A
to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed
40
35
30
25
20
15
10
5
400
375
350
325
300
BIASED
BIASED
GROUNDED
GROUNDED
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
krad(Si)
krad(Si)
FIGURE 22. ISL705xEH t
vs LOW DOSE RATE RADIATION
FIGURE 23. ISL706xEH I vs LOW DOSE RATE RADIATION
DD
FPFI
3.20
3.15
60
50
BIASED
BIASED
40
30
20
10
0
3.10
3.05
3.00
2.95
GROUNDED
GROUNDED
0
25
50
75
100
125
150
0
25
50
75
100
125
150
krad(Si)
krad(Si)
FIGURE 24. ISL706xEH V
vs LOW DOSE RATE RADIATION
FIGURE 25. ISL706xEH V
vs LOW DOSE RATE RADIATION
HYS
RST
2.0
1.8
240
220
GROUNDED
200
180
160
140
120
BIASED
1.6
1.4
BIASED
GROUNDED
1.2
1.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
krad(Si)
krad(Si)
FIGURE 26. ISL706xEH t
vs LOW DOSE RATE RADIATION
FIGURE 27. ISL706xEH t
vs LOW DOSE RATE RADIATION
WD
RST
FN8262.0
March 30, 2012
11
INTERSIL [ Intersil ]
