ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
TOP METALLIZATION
Package Characteristics
Weight of Packaged Device
Type: AlCu (99.5%/0.5%)
Thickness: 2.7µm ±0.4µm
0.31 Grams typical
BACKSIDE FINISH
Lid Characteristics
Silicon
Finish: Gold
Lid Potential: Unbiased
Case Isolation to Any Lead: 20 x 10 Ω (min)
PROCESS
9
0.6µM BiCMOS Junction Isolated
ASSEMBLY RELATED INFORMATION
Die Characteristics
Substrate Potential
Die Dimensions
Unbiased
2030µm x 2030µm (79.9 mils x 79.9 mils)
ADDITIONAL INFORMATION
Worst Case Current Density
Thickness: 483µm ± 25.4µm (19.0 mils ± 1 mil)
Interface Materials
5
2
< 2 x 10 A/cm
GLASSIVATION
Transistor Count
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm
1400
Metallization Mask Layout
MR
WDO
VDD
RST, RST, RST_OD
GND
WDI
PFI
PFO
FN8262.0
March 30, 2012
16
INTERSIL [ Intersil ]
