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5962R1121307V9A 参数 Datasheet PDF下载

5962R1121307V9A图片预览
型号: 5962R1121307V9A
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射, 5.0V / 3.3V μ处理器监控电路 [Rad-Hard, 5.0V/3.3V μ-Processor Supervisory Circuits]
分类和应用: 监控
文件页数/大小: 19 页 / 1152 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
Electrical Specifications
Unless otherwise specified V
DD
= 4.75V to 5.5V for the ISL705AEH/BEH/CEH, V
DD
= 3.15V to 3.6V for the
ISL706AEH/BEH/CEH T
A
= -55°C to +125°C. Boldface limits apply over the operating temperature range, -55°C to +125°C; over a total ionizing dose of
100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with exposure at a low dose rate of
<10mrad(Si)/s.
(Continued)
SYMBOL
t
FPFI
PARAMETER
CONDITIONS
MIN
(Note 5)
TYP
MAX
(Note 6) (Note 5) UNITS
20
25
35
40
µs
µs
PFI Falling Threshold Crossing to PFO Delay ISL705AEH/BEH/CEH
ISL706AEH/BEH/CEH
NOTES:
5. Compliance to datasheet limits is assured by one or more methods: production test, characterization and/or design.
6. Typical values shown reflect T
A
= T
J
= +25°C operation and are not guaranteed.
7. Reset is the only parameter operable within 1.2V and the minimum recommended operating supply voltage.
Typical Performance Curves
550
500
450
400
350
300
250
200
-80
-60
-40
-20
0
20
40
60
80
100 120 140
ISL706xEH
2.5
2.0
-80
-60
-40
-20
0
V
RST
(V)
ISL705xEH
I
DD
(µA)
5.0
4.5
4.0
3.5
3.0
ISL706xEH
ISL705xEH
20
40
60
80
100 120 140
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 5. I
DD
vs TEMPERATURE
FIGURE 6. V
RST
vs TEMPERATURE
1.4
1.2
1.0
V
PFI
(V)
0.8
0.6
0.4
0.2
0
-80
-60
-40
-20
0
20
40
60
80
100 120 140
ISL706xEH
RST
ISL705xEH
RST
VDD
TEMPERATURE (°C)
FIGURE 7. V
PFI
vs TEMPERATURE
FIGURE 8. ISL705xEH RESET and RESET ASSERTION
7
FN8262.0
March 30, 2012