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TE28F320 参数 Datasheet PDF下载

TE28F320图片预览
型号: TE28F320
PDF下载: 下载PDF文件 查看货源
内容描述: 3伏高级启动区块快闪记忆体 [3 Volt Advanced Boot Block Flash Memory]
分类和应用:
文件页数/大小: 58 页 / 844 K
品牌: INTEL [ INTEL ]
 浏览型号TE28F320的Datasheet PDF文件第26页浏览型号TE28F320的Datasheet PDF文件第27页浏览型号TE28F320的Datasheet PDF文件第28页浏览型号TE28F320的Datasheet PDF文件第29页浏览型号TE28F320的Datasheet PDF文件第31页浏览型号TE28F320的Datasheet PDF文件第32页浏览型号TE28F320的Datasheet PDF文件第33页浏览型号TE28F320的Datasheet PDF文件第34页  
28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
AC Characteristics, Continued  
Density  
Product  
VCC  
16 Mbit  
90 ns  
70 ns  
80 ns  
110 ns  
3.0 V–3.6 V 2.7 V–3.6 V  
Para-  
meter  
#
Sym  
Unit  
2.7 V–3.6 V  
2.7 V–3.6 V  
3.0 V–3.6 V  
2.7 V–3.6 V  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
R1  
R2  
tAVAV Read Cycle Time  
70  
80  
80  
90  
100  
110  
ns  
ns  
Address to Output  
tAVQV  
Delay  
70  
70  
80  
80  
80  
80  
90  
90  
100  
100  
110  
110  
CE# to Output  
tELQV  
R3  
ns  
Delay(1)  
OE# to Output  
tGLQV  
R4  
R5  
R6  
20  
20  
30  
30  
30  
30  
ns  
ns  
ns  
Delay(1)  
tPHQV RP# to Output Delay  
150  
150  
600  
600  
600  
600  
CE# to Output in  
tELQX  
0
0
0
0
0
0
0
0
0
0
0
0
Low Z(2)  
OE# to Output in  
R7  
R8  
R9  
tGLQX  
ns  
ns  
ns  
Low Z(2)  
CE# to Output in  
tEHQZ  
20  
20  
20  
20  
25  
25  
25  
25  
25  
25  
25  
25  
High Z(2)  
OE# to Output in  
tGHQZ  
High Z(2)  
Output Hold from  
Address, CE#, or  
OE# Change,  
Whichever Occurs  
First(2)  
R10  
tOH  
0
0
0
0
0
0
ns  
NOTES:  
1. OE# may be delayed up to t  
t
after the falling edge of CE# without impact on t  
.
ELQV– GLQV  
ELQV  
2. Sampled, but not 100% tested.  
See Figure 7, “AC Waveform: Read Operations” on page 26.  
See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum  
allowable input slew rate.  
24  
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