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TE28F320 参数 Datasheet PDF下载

TE28F320图片预览
型号: TE28F320
PDF下载: 下载PDF文件 查看货源
内容描述: 3伏高级启动区块快闪记忆体 [3 Volt Advanced Boot Block Flash Memory]
分类和应用:
文件页数/大小: 58 页 / 844 K
品牌: INTEL [ INTEL ]
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
4.5  
AC Characteristics —Read Operations  
Density  
Product  
4/8 Mbit  
90 ns  
110 ns  
3.0 V–3.6 V 2.7 V–3.6 V  
#
Sym  
Parameter  
Unit  
V
3.0 V–3.6 V  
2.7 V–3.6 V  
CC  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
R1  
R2  
R3  
R4  
R5  
R6  
R7  
R8  
R9  
t
Read Cycle Time  
80  
90  
100  
110  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
AVAV  
t
Address to Output Delay  
CE# to Output Delay(1)  
OE# to Output Delay(1)  
RP# to Output Delay  
CE# to Output in Low Z(2)  
OE# to Output in Low Z(2)  
CE# to Output in High Z(2)  
OE# to Output in High Z(2)  
80  
80  
90  
90  
100  
100  
30  
110  
110  
30  
AVQV  
t
t
ELQV  
30  
30  
GLQV  
PHQV  
t
600  
600  
600  
600  
t
0
0
0
0
0
0
0
0
ELQX  
GLQX  
EHQZ  
t
t
t
25  
25  
25  
25  
25  
25  
25  
25  
GHQZ  
Output Hold from Address,  
CE#, or OE# Change,  
R10  
t
0
0
0
0
ns  
OH  
Whichever Occurs First(2)  
NOTES:  
1. OE# may be delayed up to t  
t
after the falling edge of CE# without impact on t  
.
ELQV– GLQV  
ELQV  
2. Sampled, but not 100% tested.  
See Figure 7, “AC Waveform: Read Operations” on page 26.  
See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum allowable  
input slew rate.  
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23  
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