28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
4.6
AC Characteristics —Write Operations
Density
Product
4/8 Mbit
90 ns
110 ns
#
Sym
Parameter
Unit
3.0 V – 2.7 V –
3.0 V –
3.6 V
2.7 V –
3.6 V
V
CC
3.6 V
Min
3.6 V
Min
Note
Min
Min
t
t
/
PHWL
PHEL
W1
W2
W3
W4
W5
W6
W7
W8
W9
RP# High Recovery to WE# (CE#) Going Low
CE# (WE#) Setup to WE# (CE#) Going Low
WE# (CE#) Pulse Width
600
0
600
0
600
0
600
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
t
/
ELWL
WLEL
0
70
60
70
0
t
t
/
ELEH
1
2
2
70
50
70
0
70
50
70
0
70
60
70
0
WLWH
t
t
/
/
/
/
/
DVWH
DVEH
Data Setup to WE# (CE#) Going High
Address Setup to WE# (CE#) Going High
CE# (WE#) Hold Time from WE# (CE#) High
Data Hold Time from WE# (CE#) High
Address Hold Time from WE# (CE#) High
WE# (CE#) Pulse Width High
t
t
AVWH
AVEH
t
t
WHEH
EHWH
t
t
WHDX
EHDX
2
2
1
0
0
0
0
t
t
WHAX
EHAX
0
0
0
0
t
t
WHWL /
EHEL
30
30
30
30
t
t
/
VPWH
VPEH
W10
W11
V
V
Setup to WE# (CE#) Going High
Hold from Valid SRD
3
3
200
0
200
0
200
0
200
0
ns
ns
PP
t
QVVL
PP
NOTES:
1. Refer to command definition table (Table 6) for valid A or D
.
IN
IN
2. Write pulse width (t ) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going
WP
high (whichever goes high first). Hence, t
= t
= t
= t
= t
. Similarly, Write pulse width
WP
WLWH
ELEH
WLEH
ELWH
high (t
) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low
WPH
(whichever goes low first). Hence, t
= t
= t
= t
= t
.
WPH
WHWL
EHEL
WHEL
EHWL
3. Sampled, but not 100% tested.
Read timing characteristics during program suspend and erase suspend are the same as during read-only
operations.
See Figure 5 for timing measurements and maximum allowable input slew rate.
See Figure 8, “AC Waveform: Program and Erase Operations” on page 32.
3UHOLPLQDU\
27
INTEL [ INTEL ]
