28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
DC Characteristics, Continued
V
2.7 V–3.6 V
2.7 V–3.6 V
2.7 V–2.85 V
1.65 V–2.5 V
2.7 V–3.3 V
1.8 V–2.5 V
CC
Sym
Parameter
V
Unit
Test Conditions
CCQ
Note
Typ
Max
Typ
Max
Typ
Max
V
= V
PP1, 2, 3
PP
16
45
21
45
21
45
mA
mA
mA
mA
Program in
Progress
V
+ V Erase Current
PP
CC
1,2,4
for 0.18 Micron Product
V
= V
PP4
PP
16
20
16
45
45
45
16
21
16
45
45
45
16
21
16
45
45
45
Program in
Progress
I
CCE
+I
PPE
V
= V
PP PP1, 2, 3
Program in
Progress
V
+ V Erase Current
PP
CC
for 0.25 Micron and 0.4
Micron Product
1,2,4
1,4
V
= V
PP4
PP
Program in
Progress
V
= V
PP1, 2, 3, 4
PP
I
V
Erase Suspend
Program or Erase
Suspend in
Progress
PPES
PP
50
200
50
200
50
200
µA
Current
I
PPWS
DC Characteristics, Continued
V
2.7 V–3.6 V
2.7 V–3.6 V
2.7 V–2.85 V
1.65 V–2.5 V
2.7 V–3.3 V
1.8 V–2.5 V
CC
Sym
Parameter
V
Unit
Test Conditions
CCQ
Note
Min
Max
Min
Max
Min
Max
V
*
CC
V
Input Low Voltage
–0.4
–0.4
0.4
–0.4
0.4
V
V
IL
0.22 V
V
V
V
V
V
CCQ
CCQ
CCQ
CCQ
CCQ
V
Input High Voltage
2.0
IH
+0.3V –0.4V +0.3V –0.4V +0.3V
V
V
= V Min
CC
CC
V
Output Low Voltage
Output High Voltage
–0.1
0.1
-0.1
0.1
-0.1
0.1
1.5
V
= V
Min
OL
CCQ
CCQ
I
= 100 µA
OL
V
V
= V Min
CC
CC
V
V
V
CCQ
–0.1V
CCQ
CCQ
V
V
V
V
= V
Min
OH
CCQ
CCQ
–0.1V
–0.1V
I
= –100 µA
OH
Complete Write
Protection
V
Lock-Out Voltage
5
1.5
3.6
1.5
PPLK
PP
V
V
V
V
5
5
2.7
V
V
V
V
PP1
PP2
PP3
PP4
2.7
2.85
12.6
V
during Program and
PP
Erase Operations
5
2.7
3.3
5,6
11.4
1.5
12.6
11.4
1.5
11.4
12.6
V
Prog/Erase
CC
V
1.5
1.2
V
V
LKO
Lock Voltage
V
Prog/Erase
CCQ
V
1.2
1.2
LKO2
Lock Voltage
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at nominal V , T = +25 °C.
CC
A
3UHOLPLQDU\
21
INTEL [ INTEL ]
