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TE28F320 参数 Datasheet PDF下载

TE28F320图片预览
型号: TE28F320
PDF下载: 下载PDF文件 查看货源
内容描述: 3伏高级启动区块快闪记忆体 [3 Volt Advanced Boot Block Flash Memory]
分类和应用:
文件页数/大小: 58 页 / 844 K
品牌: INTEL [ INTEL ]
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
AC Characteristics, Continued  
Density  
Product  
64 Mbit  
90 ns  
2.7 V–3.6 V  
100 ns  
#
Sym  
Parameter  
Unit  
V
2.7 V–3.6 V  
CC  
Note  
Min  
Max  
Min  
Max  
R1  
R2  
R3  
R4  
R5  
R6  
R7  
R8  
R9  
t
Read Cycle Time  
90  
100  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
AVAV  
t
t
Address to Output Delay  
CE# to Output Delay  
90  
90  
100  
100  
20  
AVQV  
ELQV  
GLQV  
PHQV  
1
1
t
OE# to Output Delay  
20  
t
RP# to Output Delay  
150  
150  
t
CE# to Output in Low Z  
OE# to Output in Low Z  
CE# to Output in High Z  
OE# to Output in High Z  
Output Hold from Address, CE#, or  
2
2
2
2
0
0
0
0
ELQX  
GLQX  
EHQZ  
GHQZ  
t
t
20  
20  
20  
20  
t
R10  
t
2
0
0
ns  
OH  
OE# Change, Whichever Occurs First  
NOTES:  
1. OE# may be delayed up to t  
t
after the falling edge of CE# without impact on t  
.
ELQV– GLQV  
ELQV  
2. Sampled, but not 100% tested.  
See Figure 7 for the AC waveform for read operations.  
See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum  
allowable input slew rate.  
Figure 7. AC Waveform: Read Operations  
Device  
Address Selection  
Standby  
Data Valid  
VIH  
Address Stable  
ADDRESSES (A)  
CE# (E)  
VIL  
VIH  
R1  
VIL  
R8  
R9  
VIH  
VIL  
OE# (G)  
VIH  
VIL  
WE# (W)  
R4  
R3  
R7  
R10  
VOH  
VOL  
R6  
High Z  
High Z  
DATA (D/Q)  
Valid Output  
R2  
VIH  
VIL  
RP# (P)  
R5  
26  
3UHOLPLQDU\  
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