28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
4.4
DC Characteristics
V
2.7 V–3.6 V
2.7 V–3.6 V
2.7 V–2.85 V
1.65 V–2.5 V
2.7 V–3.3 V
1.8 V–2.5 V
CC
Sym
Parameter
V
Unit
Test Conditions
CCQ
Note
Typ
Max
Typ
Max
Typ
Max
V
V
V
= V Max
CC
CC
I
Input Load Current
1,2
± 1
± 1
± 1
µA
= V
Max
LI
CCQ
CCQ
= V
or GND
IN
CCQ
V
V
V
= V Max
CC
CC
I
Output Leakage Current
1,2
1,2
± 10
15
35
15
25
18
18
5
± 10
50
50
20
25
15
15
5
± 10
250
250
20
µA
µA
µA
µA
µA
mA
mA
µA
= V
Max
LO
CCQ
CCQ
= V
or GND
IN
CCQ
V
Standby Current for
V
= V Max
CC
CC
CC
7
18
7
20
20
7
150
150
7
0.18 Micron Product
CE# = RP# = V
or during Program/
Erase Suspend
CCQ
I
I
I
CCS
CCD
CCR
V
Standby Current for
CC
0.25 Micron and
0.4 Micron Product
1,2
WP# = V
or GND
CCQ
V
Power-Down Current
CC
1,2
V
V
V
= V Max
CC
for 0.18 Micron Product
CC
= V
Max
CCQ
CCQ
V
Power-Down Current
= V
or GND
CC
IN
CCQ
for 0.25 Micron and
0.4 Micron Product
1,2
7
7
7
25
RP# = GND ± 0.2 V
V
Read Current for
CC
V
V
= V Max
CC
1,2,3
1,2,3
9
8
9
15
CC
0.18 Micron Product
= V
Max
CCQ
CCQ
OE# = V , CE# =V
f = 5 MHz, I
Inputs = V or V
IH
IL
V
Read Current for
CC
=0 mA
OUT
0.25 and 0.4 Micron
Product
10
0.2
8
9
15
IL
IH
V
Deep Power-Down
RP# = GND ± 0.2 V
PP
I
I
0.2
0.2
5
PPD
PPR
Current
V
V
V
V
≤ V
≤ V
> V
PP
PP
PP
PP
CC
2
±15
2
±15
2
±15
µA
µA
CC
V
Read Current
1,4
PP
50
200
50
200
50
200
CC
=V
PP1, 2, 3
18
8
55
15
55
30
18
10
18
10
55
30
55
30
18
10
18
10
55
30
55
30
mA
mA
mA
mA
V
+ V Program
Program in Progress
CC
PP
Current for 0.18 Micron
Product
1,2,4
V
= V
PP
PP4
Program in Progress
I
I
CCW+
PPW
V
=V
PP
PP1, 2, 3
18
10
V
+ V Program
PP
Program in Progress
CC
Current for 0.25 Micron
and 0.4 Micron Product
1,2,4
V
= V
PP
PP4
Program in Progress
20
3UHOLPLQDU\
INTEL [ INTEL ]
