256-Mbit J3 (x8/x16)
Table 8. Read Operations (Sheet 2 of 2)
Asynchronous
Specifications
(All units in ns unless
otherwise noted)
V
= 2.7 V–3.6 V (3)
= 2.7 V–3.6 V (3)
CC
V
CCQ
Notes
-150
Speed
-110
-115
-120
-125
Bin
#
Sym
Parameter
Density
Min Max Min Max Min
Max
Min Max Min Max
t
t
FLQV/
FHQV
R12
BYTE# to Output Delay
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
1,2
R13
R14
R15
R16
t
t
t
t
BYTE# to Output in High Z
CEx High to CEx Low
1,2,5
1,2,5
5, 6
4
FLQZ
EHEL
APA
0
0
0
0
0
Page Address Access Time
OE# to Array Output Delay
25
25
25
25
25
25
30
25
25
25
GLQV
NOTES:
CE low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CE high is
X
X
defined at the first edge of CE0, CE1, or CE2 that disables the device (see Table 13).
1. See AC Input/Output Reference Waveforms for the maximum allowable input slew
rate.
2. OE# may be delayed up to t
-t
after the first edge of CE0, CE1, or CE2 that
ELQV GLQV
enables the device (see Table 13) without impact on t
.
ELQV
3. See Figure 15, “Transient Input/Output Reference Waveform for VCCQ = 2.7 V–3.6
V” on page 29 and Figure 16, “Transient Equivalent Testing Load Circuit” on
page 30 for testing characteristics.
4. When reading the flash array a faster t
(R16) applies. Non-array reads refer to
GLQV
Status Register reads, query reads, or device identifier reads.
5. Sampled, not 100% tested.
6. For devices configured to standard word/byte read mode, R15 (t
) will equal R2
APA
(t
).
AVQV
Figure 9. Single Word Asynchronous Read Waveform
R1
R2
Address [A]
R3
R8
CEx [E]
R9
OE# [G]
WE# [W]
R4
R16
R7
R6
R10
Data [D/Q]
R12
R11
R13
BYTE#[F]
RP# [P]
R5
Datasheet
23
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