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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
7.2  
Write Operations  
Table 9. Write Operations  
Valid for All  
Speeds  
Versions  
Unit  
Notes  
#
Symbol  
(t  
Parameter  
RP# High Recovery to WE# (CE ) Going Low  
Min  
Max  
W1  
W2  
t
t
t
t
t
t
t
t
t
t
t
t
t
)
1
0
µs  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
1,2,3  
1,2,4  
1,2,4  
1,2,5  
1,2,5  
1,2,  
PHWL PHEL  
X
(t  
)
CE (WE#) Low to WE# (CE ) Going Low  
ELWL WLEL  
X
X
W3  
Write Pulse Width  
70  
50  
55  
0
WP  
W4  
(t  
)
Data Setup to WE# (CE ) Going High  
X
DVWH DVEH  
W5  
(t  
)
Address Setup to WE# (CE ) Going High  
X
AVWH AVEH  
W6  
(t  
)
CE (WE#) Hold from WE# (CE ) High  
X X  
WHEH EHWH  
W7  
(t  
)
Data Hold from WE# (CE ) High  
0
1,2,  
WHDX EHDX  
X
W8  
(t  
)
Address Hold from WE# (CE ) High  
0
1,2,  
WHAX EHAX  
X
W9  
Write Pulse Width High  
30  
0
1,2,6  
1,2,3  
1,2,7  
1,2,8  
1,2,3,8,9  
WPH  
W11  
W12  
W13  
W15  
(t  
)
V
Setup to WE# (CE ) Going High  
PEN X  
VPWH VPEH  
(t  
)
Write Recovery before Read  
WE# (CE ) High to STS Going Low  
35  
WHGL EHGL  
(t  
)
500  
WHRL EHRL  
X
V
Hold from Valid SRD, STS Going High  
PEN  
0
QVVL  
NOTES:  
CE low is defined as the first edge of CE0, CE1, or CE2 that enables the device. CE high is defined at the first edge of CE0, CE1,  
X
X
or CE2 that disables the device (see Table 13).  
1. Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as  
during read-only operations. Refer to AC Characteristics–Read-Only Operations.  
2. A write operation can be initiated and terminated with either CE or WE#.  
X
3. Sampled, not 100% tested.  
4. Write pulse width (t ) is defined from CE or WE# going low (whichever goes low last) to CE or WE# going  
WP  
X
X
high (whichever goes high first). Hence, t  
= t  
= t  
= t  
= t  
.
WP  
WLWH  
ELEH  
WLEH  
ELWH  
5. Refer to Table 14 for valid A and D for block erase, program, or lock-bit configuration.  
IN  
IN  
6. Write pulse width high (t  
) is defined from CE or WE# going high (whichever goes high first) to CE or WE#  
WPH  
X
X
going low (whichever goes low first). Hence, t  
= t  
= t  
= t  
= t  
.
WPH  
WHWL  
EHEL  
WHEL  
EHWL  
7. For array access, t  
is required in addition to t  
for any accesses after a write.  
AVQV  
WHGL  
8. STS timings are based on STS configured in its RY/BY# default mode.  
9. V should be held at V until determination of block erase, program, or lock-bit configuration success  
PEN  
PENH  
(SR[1,3,4:5] = 0).  
26  
Datasheet  
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