256-Mbit J3 (x8/x16)
7.3
Block Erase, Program, and Lock-Bit Configuration
Performance
Table 10. Configuration Performance
#
Sym
Parameter
Typ
Max(8)
Unit
Notes
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
W16
218
654
µs
1,2,3,4,5,6,7
t
t
WHQV3
EHQV3
W16
Byte Program Time (Using Word/Byte Program Command)
Block Program Time (Using Write to Buffer Command)
Block Erase Time
210
0.8
1.0
630
2.4
5.0
µs
1,2,3,4
1,2,3,4
1,2,3,4
sec
sec
t
t
WHQV4
EHQV4
W16
W16
W16
W16
W16
t
t
WHQV5
EHQV5
Set Lock-Bit Time
64
0.5
25
26
75/85
0.70/1.4
75/90
µs
sec
µs
1,2,3,4,9
1,2,3,4,10
1,2,3,9
t
t
WHQV6
EHQV6
Clear Block Lock-Bits Time
t
t
WHRH1
EHRH1
Program Suspend Latency Time to Read
Erase Suspend Latency Time to Read
t
t
WHRH
EHRH
35/40
µs
1,2,3,9
NOTES:
1. Typical values measured at T = +25 °C and nominal voltages. Assumes corresponding lock-bits are
A
not set. Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (t
7. Effective per-word program time (t
, t
) is 6.8 µs/byte (typical).
) is 13.6 µs/word (typical).
WHQV1 EHQV1
, t
WHQV2 EHQV2
8. Max values are measured at worst case temperature and V corner after 100k cycles (except as
CC
noted).
9. Max values are expressed at -25 °C/-40 °C.
10.Max values are expressed at 25 °C/-40 °C.
Datasheet
27
INTEL [ INTEL ]
