256-Mbit J3 (x8/x16)
Table 6. DC Current Characteristics (Sheet 2 of 2)
VCCQ
VCC
2.7 - 3.6V
2.7 - 3.6V
Test Conditions
Notes
Symbol
Parameter
Typ Max Unit
35
40
70
80
mA CMOS Inputs, V
= V
PEN CC
V
Block Erase or Clear
CC
I
1,4
1,5
CCE
Block Lock-Bits Current
mA TTL Inputs, V
= V
CC
PEN
V
Program Suspend or
CC
I
I
CCWS
CCES
Block Erase Suspend
Current
10
mA Device is enabled (see Table 13)
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Intel’s Application Support Hotline or your local sales office for information about typical
specifications.
2. Includes STS.
3. CMOS inputs are either V ± 0.2 V or GND ± 0.2 V. TTL inputs are either V or V .
CC
IL
IH
4. Sampled, not 100% tested.
5. I and I are specified with the device selected. If the device is read or written while in erase suspend
CCWS
CCES
mode, the device’s current draw is I
and I
CCR
CCWS
6.2
DC Voltage Characteristics
Table 7. DC Voltage Characteristics
Symbol
Parameter
Input Low Voltage
Min
Max
Unit
Test Conditions
Notes
V
–0.5
0.8
V
2, 6
IL
V
+ 0.5
CCQ
V
Input High Voltage
2.0
V
V
V
V
V
V
2,6
IH
V
= V
= 2 mA
Min
Min
Min
Min
CCQ
CCQ
0.4
0.2
I
OL
V
Output Low Voltage
1,2
OL
V
= V
CCQ
CCQ
I
= 100 µA
V = V
CCQ
OL
0.85 ×
CCQ
= –2.5 mA
V
I
CCQ
OH
V
Output High Voltage
1,2
OH
V
V
= V
CCQ
= –100 µA
CCQ
CCQ
– 0.2
I
OH
V
Lockout during Program,
PEN
V
2.2
2,3,4,7
PENLK
Erase and Lock-Bit Operations
20
Datasheet
INTEL [ INTEL ]
