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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
0606_16  
NOTES:  
1. CE low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE high is defined at the  
X
X
first edge of CE0, CE1, or CE2 that disables the device (see Table 13).  
2. When reading the flash array a faster t  
(R16) applies. For non-array reads, R4 applies (i.e.: Status  
GLQV  
Register reads, query reads, or device identifier reads).  
Figure 10. 4-Word Page Mode Read Waveform  
R1  
R2  
A[MAX:3] [A]  
A[2:1] [A]  
00  
01  
10  
11  
R3  
CEx [E]  
R4  
OE# [G]  
WE# [W]  
R8  
R10  
R9  
R6  
R7  
R10  
R15  
D[15:0] [Q]  
RP# [P]  
1
2
3
4
R5  
NOTE: CE low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE high is defined at  
X
X
the first edge of CE0, CE1, or CE2 that disables the device (see Table 13).  
24  
Datasheet  
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