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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
Table 7. DC Voltage Characteristics  
Symbol  
Parameter  
Min  
Max  
Unit  
Test Conditions  
Notes  
V
during Block Erase,  
PEN  
V
2.7  
2.0  
3.6  
V
V
3,4  
5
PENH  
LKO  
Program, or Lock-Bit Operations  
V Lockout Voltage  
CC  
V
NOTES:  
1. Includes STS.  
2. Sampled, not 100% tested.  
3. Block erases, programming, and lock-bit configurations are inhibited when V  
V  
,
PEN  
PENLK  
and not guaranteed in the range between V  
(max).  
(max) and V  
(min), and above V  
PENLK  
PENH PENH  
4. Typically, V  
is connected to V (2.7 V–3.6 V).  
PEN  
CC  
5. Block erases, programming, and lock-bit configurations are inhibited when V < V  
, and  
CC  
LKO  
not guaranteed in the range between V  
(min) and V (min), and above V (max).  
LKO  
CC CC  
6. Includes all operational modes of the device including standby and power-up sequences.  
7. VCC operating condition for standby has to meet typical operationg coditons.  
Datasheet  
21  
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