256-Mbit J3 (x8/x16)
6.0
Electrical Specifications
6.1
DC Current Characteristics
Table 6. DC Current Characteristics (Sheet 1 of 2)
VCCQ
VCC
2.7 - 3.6V
2.7 - 3.6V
Test Conditions
Notes
Symbol
Parameter
Load Current
PEN
Typ Max Unit
V
V
= V Max; V
= V
Max
CC
CC
CCQ
CCQ
I
Input and V
1
µA
µA
1
1
LI
= V
or GND
IN
CCQ
V
V
= V Max; V = V
CCQ
Max
CC
CC
CCQ
I
Output Leakage Current
10
LO
= V
or GND
IN
CCQ
CMOS Inputs, V = V Max,
CC
CC
Device is disabled (see Table 13, “Chip Enable
Truth Table” on page 33),
50
120
µA
I
V
V
Standby Current
1,2,3
RP# = V
± 0.2 V
CCS
CC
CCQ
TTL Inputs, V = V Max,
CC
CC
0.71
50
2
mA
Device is disabled (see Table 13), RP# = V
IH
I
Power-Down Current
120
µA
RP# = GND ± 0.2 V, I
(STS) = 0 mA
CCD
CC
OUT
CMOS Inputs, V = V Max, V
= V
CCQ
CC
CC
CCQ
Max using standard 4 word page mode reads.
15
24
20
29
mA
mA
Device is enabled (see Table 13)
4-
word
f = 5 MHz, I
= 0 mA
OUT
CMOS Inputs,V = V Max, V
= V
CCQ
CC
CC
CCQ
Page
Max using standard 4 word page mode reads.
1,3
Device is enabled (see Table 13)
f = 33 MHz, I
= 0 mA
OUT
•
CMOS Inputs, V = V Max, V
=
CC
CC
CCQ
V
Max using standard 8 word page
CCQ
mode reads.
10
30
15
54
mA
mA
•
•
Device is enabled (see Table 13)
V
Page Mode Read
CC
f = 5 MHz, I
= 0 mA
I
OUT
CCR
Current
CMOS Inputs,V = V Max, V =
CCQ
CC
CC
V
Max using standard 8 word page
CCQ
mode reads.
8-
•
Device is enabled (see Table 13)
word
Page
f = 33 MHz, I
= 0 mA
OUT
•
•
Density: 128-, 64-, and 32- Mbit
CMOS Inputs,V = V Max, V =
CCQ
CC
CC
V
Max using standard 8 word page
CCQ
mode reads.
26
46
mA
•
•
Device is enabled (see Table 13)
f = 33 MHz, I
= 0 mA
OUT
Density: 256Mbit
= V
35
40
60
70
mA CMOS Inputs, V
PEN
CC
V
Program or Set Lock-
CC
I
1,4
CCW
Bit Current
mA TTL Inputs, V
= V
CC
PEN
Datasheet
19
INTEL [ INTEL ]
