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TE28F128J3C-150 参数 Datasheet PDF下载

TE28F128J3C-150图片预览
型号: TE28F128J3C-150
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔StrataFlash闪存( J3 ) [Intel StrataFlash Memory (J3)]
分类和应用: 闪存
文件页数/大小: 72 页 / 909 K
品牌: INTEL [ INTEL ]
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256-Mbit J3 (x8/x16)  
4.4  
Signal Descriptions  
Table 3 describes active signals used.  
Table 3. Signal Descriptions (Sheet 1 of 2)  
Symbol  
Type  
Name and Function  
BYTE-SELECT ADDRESS: Selects between high and low byte when the device is in x8 mode.  
This address is latched during a x8 program cycle. Not used in x16 mode (i.e., the A0 input buffer  
is turned off when BYTE# is high).  
A0  
Input  
ADDRESS INPUTS: Inputs for addresses during read and program operations. Addresses are  
internally latched during a program cycle.  
32-Mbit: A[21:0]  
64-Mbit: A[22:0]  
A[MAX:1]  
Input  
128-Mbit: A[23:0]  
256-Mbit: A[24:0]  
LOW-BYTE DATA BUS: Inputs data during buffer writes and programming, and inputs  
D[7:0]  
Input/Output commands during CUI writes. Outputs array, CFI, identifier, or status data in the appropriate read  
mode. Data is internally latched during write operations.  
HIGH-BYTE DATA BUS: Inputs data during x16 buffer writes and programming operations.  
Input/Output Outputs array, CFI, or identifier data in the appropriate read mode; not used for Status Register  
reads. Data is internally latched during write operations in x16 mode. D[15-8] float in x8 mode  
D[15:8]  
CHIP ENABLES: Activates the device’s control logic, input buffers, decoders, and sense  
amplifiers. When the device is de-selected (see Table 13 on page 33), power reduces to standby  
levels.  
CE0,  
CE1,  
CE2  
Input  
All timing specifications are the same for these three signals. Device selection occurs with the  
first edge of CE0, CE1, or CE2 that enables the device. Device deselection occurs with the first  
edge of CE0, CE1, or CE2 that disables the device (see Table 13 on page 33).  
RESET/ POWER-DOWN: RP#-low resets internal automation and puts the device in power-  
down mode. RP#-high enables normal operation. Exit from reset sets the device to read array  
mode. When driven low, RP# inhibits write operations which provides data protection during  
RP#  
Input  
power transitions.  
OUTPUT ENABLE: Activates the device’s outputs through the data buffers during a read cycle.  
OE# is active low.  
OE#  
WE#  
Input  
WRITE ENABLE: Controls writes to the CUI, the Write Buffer, and array blocks. WE# is active  
low. Addresses and data are latched on the rising edge of WE#.  
Input  
STATUS: Indicates the status of the internal state machine. When configured in level mode  
Open Drain (default), it acts as a RY/BY# signal. When configured in one of its pulse modes, it can pulse to  
STS  
Output  
Input  
indicate program and/or erase completion. For alternate configurations of the STATUS signal,  
see the Configurations command. STS is to be tied to VCCQ with a pull-up resistor.  
BYTE ENABLE: BYTE#-low places the device in x8 mode; data is input or output on D[7:0],  
while D[15:8] is placed in High-Z. Address A0 selects between the high and low byte. BYTE#-  
high places the device in x16 mode, and turns off the A0 input buffer. Address A1 becomes the  
lowest-order address bit.  
BYTE#  
VPEN  
ERASE / PROGRAM / BLOCK LOCK ENABLE: For erasing array blocks, programming data, or  
configuring lock-bits.  
Input  
With V  
V  
, memory contents cannot be altered.  
PEN  
PENLK  
CORE POWER SUPPLY: Core (logic) source voltage. Writes to the flash array are inhibited  
when V V . Device operation at invalid Vcc voltages should not be attempted.  
VCC  
Power  
Power  
CC  
LKO  
VCCQ  
I/O POWER SUPPLY: I/O Output-driver source voltage. This ball can be tied to V  
.
CC  
16  
Datasheet  
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