BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY
E
6.2.3
COMMERCIAL TEMPERATURE DC CHARACTERISTICS
Commercial Temperature DC Characteristics for
4-, 8-, and 16-Mbit Smart 5 FlashFile™ Memories
5.0V VCC
Test
Sym
Parameter
Notes Typ
Max Unit
Conditions
ILI
Input Load Current
Output Leakage Current
VCC Standby Current
1
1
±1
µA VCC = VCC Max, VIN = VCC or GND
µA VCC = VCC Max, VOUT = VCC or GND
µA CMOS Inputs
ILO
ICCS
±10
100
1,3,6
25
V
CC = VCC Max
CE# = RP# = VCC ± 0.2V
0.4
2
mA TTL Inputs
CC = VCC Max, CE# = RP# = VIH
V
ICCD
ICCR
VCC Deep Power-Down
Current
1
10
35
µA RP# = GND ± 0.2V
OUT (RY/BY#) = 0 mA
I
CMOS Inputs
CC = VCC Max, CE# = GND
f = 8 MHz, IOUT = 0 mA
VCC Read Current
1,5,6
17
20
mA
V
50
mA TTL Inputs
V
CC = VCC Max, CE# = GND
f = 8 MHz, IOUT = 0 mA
ICCW VCC Program/Set
Lock-Bit Current
1,7
1,7
1,2
35
30
30
25
10
mA VPP = 5.0V ± 10%
mA VPP = 12.0V ± 5%
mA VPP = 5.0V ± 10%
mA VPP = 12.0V ± 5%
mA CE# = VIH
ICCE
VCC Block Erase/Clear
Block Lock-Bits Current
ICCWS VCC Program/Block
1
Erase Suspend Current
VPP Standby Current
VPP Read Current
ICCES
IPPS
IPPR
IPPD
1
1
1
± 2
10
± 15
200
5
µA
VPP ≤ VCC
µA VPP > VCC
VPP Deep Power-Down
Current
0.1
µA RP# = GND ± 0.2V
IPPW
VPP Program or
1,7
1,7
1
40
15
mA VPP = 5.0V ± 10%
mA VPP = 12.0V ± 5%
mA VPP = 5.0V ± 10%
mA VPP = 12.0V ± 5%
µA VPP = VPPH1/2
Set Lock-Bit Current
VPP Block Erase or Clear
Block Lock-Bits Current
IPPE
20
15
IPPWS VPP Program or Block
Erase Suspend Current
10
200
IPPES
28
PRODUCT PREVIEW
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