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TE28F008S5-100 参数 Datasheet PDF下载

TE28F008S5-100图片预览
型号: TE28F008S5-100
PDF下载: 下载PDF文件 查看货源
内容描述: 字节宽的SMART 5 FlashFile Memory系列4 ,8和16 MBIT [BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 37 页 / 505 K
品牌: INTEL [ INTEL ]
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E
BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY  
Device  
Address Selection  
Data  
Valid  
Standby  
V
IH  
ADDRESSES (A)  
Address Stable  
VIL  
R1  
V
IH  
CE# (E)  
V
IL  
R8  
R9  
R2  
R3  
V
IH  
OE# (G)  
VIL  
V
IH  
WE# (W)  
R4  
VIL  
R5  
R10  
V
OH  
R6  
DATA (D/Q)  
(DQ0-DQ7)  
High Z  
High Z  
Valid Output  
VOL  
R7  
VCC  
V
IH  
RP# (P)  
VIL  
Figure 15. AC Waveform for Read Operations  
6.2.5  
COMMERCIAL TEMPERATURE RESET OPERATIONS  
V
IH  
RY/BY# (R)  
VIL  
P2  
VIH  
RP# (P)  
VIL  
P1  
Figure 16. AC Waveform for Reset Operation  
#
Sym  
Parameter  
Notes Min  
Max Unit  
P1 tPLPH RP# Pulse Low Time  
100  
ns  
(If RP# is tied to VCC, this specification is not applicable)  
P2 tPLRH RP# Low to Reset during Block Erase, Program, or Lock-Bit  
Configuration  
2,3  
12  
µs  
NOTES:  
1. These specifications are valid for all product versions (packages and speeds).  
2. If RP# is asserted when the WSM is not busy (RY/BY# = ‘1’), the reset will complete within 100 ns.  
3. A reset time, tPHQV, is required from the latter of RY/BY# or RP# going high until outputs are valid.  
31  
PRODUCT PREVIEW  
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