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RD28F1602C3B110 参数 Datasheet PDF下载

RD28F1602C3B110图片预览
型号: RD28F1602C3B110
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT英特尔?高级+引导?座闪存?记忆? ( C3) ?堆叠芯片? ScalPackage ? Familye [3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 70 页 / 1167 K
品牌: INTEL [ INTEL ]
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3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family  
2.1.4  
Flash Reset  
The device enters a reset mode when RP# is driven low. In reset mode, internal circuitry is turned  
off and outputs are placed in a high-impedance state.  
After return from reset, a time tPHQV is required until outputs are valid, and a delay (tPHWL or  
tPHEL) is required before a write sequence can be initiated. After this wake-up interval, normal  
operation is restored. The device defaults to read array mode, the status register is set to 80h, and  
the read configuration register defaults to asynchronous reads.  
If RP# is taken low during a block erase or program operation, the operation will be aborted and the  
memory contents at the aborted location are no longer valid.  
2.1.5  
Write  
Writes to flash take place when both F-CE# and F-WE# are asserted and F-OE# is deasserted.  
Writes to SRAM take place when both S-CS1# and S-WE# are asserted and S-OE# and S-CS2 are  
deasserted. Commands are written to the flash memory’s Command User Interface (CUI) using  
standard microprocessor write timings to control flash operations. The CUI does not occupy an  
addressable memory location within the flash component. The address and data buses are latched  
on the rising edge of the second F-WE# or F-CE# pulse, whichever occurs first. (See Figure 6 and  
Figure 7 for read and write waveforms.)  
3.0  
Flash Memory Modes of Operation  
The flash memory has four read modes: read array, read configuration, read status, and CFI query.  
The write modes are program and erase. Three additional modes (erase suspend to program, erase  
suspend to read and program suspend to read) are available only during suspended operations.  
These modes are reached using the commands summarized in Table 5, “Flash Memory Command  
Definitions” on page 17.  
3.1  
Read Array (FFh)  
When F-RP# transitions from VIL (reset) to VIH, the device defaults to read array mode and will  
respond to the read control inputs without any additional CUI commands.  
In addition, the address of the desired location must be applied to the address balls. If the device is  
not in read array mode, as would be the case after a program or erase operation, the Read Array  
command (FFh) must be written to the CUI before array reads can take place.  
3.2  
Read Identifier (90h)  
The read configuration mode outputs the manufacturer/device identifier. The device is switched to  
this mode by writing the read configuration command (90h). Once in this mode, read cycles from  
addresses shown in Table 4, “Read Configuration Table” on page 14 retrieve the specified  
information. To return to read array mode, write the Read Array command (FFh).  
Datasheet  
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