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RD28F1602C3B110 参数 Datasheet PDF下载

RD28F1602C3B110图片预览
型号: RD28F1602C3B110
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT英特尔?高级+引导?座闪存?记忆? ( C3) ?堆叠芯片? ScalPackage ? Familye [3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 70 页 / 1167 K
品牌: INTEL [ INTEL ]
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3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family  
command is written to the flash memory, the WSM will continue with the programming process  
and status register bits SR.2 and SR.7 will automatically be cleared. The device automatically  
outputs status register data when read (see Appendix A, Program Suspend/Resume Flowcharts)  
after the Program Resume command is written. F-VPP must remain at the same F-VPP level used  
for program while in program suspend mode. F-RP# must also remain at VIH.  
3.6  
Block Erase (20h)  
To erase a block, write the Erase Set-up and Erase Confirm commands to the CUI, along with an  
address identifying the block to be erased. This address is latched internally when the Erase  
Confirm command is issued. Block erasure results in all bits within the block being set to “1.” Only  
one block can be erased at a time. The WSM will execute a sequence of internally timed events to  
program all bits within the block to “0,” erase all bits within the block to “1,” then verify that all  
bits within the block are sufficiently erased. While the erase executes, status bit 7 is a “0.”  
When the status register indicates that erasure is complete, check the erase status bit to verify that  
the erase operation was successful. If the Erase operation was unsuccessful, SR.5 of the status  
register will be set to a “1,” indicating an erase failure. If F-VPP was not within acceptable limits  
after the Erase Confirm command was issued, the WSM will not execute the erase sequence;  
instead, SR.5 of the status register is set to indicate an erase error, and SR.3 is set to a “1” to  
identify that F-VPP supply voltage was not within acceptable limits.  
After an erase operation, clear the status register (50h) before attempting the next operation. Any  
CUI instruction can follow after erasure is completed; however, to prevent inadvertent status  
register reads, it is advisable to place the flash in read array mode after the erase is complete.  
3.6.1  
Suspending and Resuming Erase (B0h/D0h)  
An erase operation can take several seconds to complete, therefore, the Erase Suspend command is  
provided to allow erase-sequence interruption in order to read data from, or program data to,  
another block in memory. Once an erase sequence has started, writing the Erase Suspend command  
to the CUI causes the device to suspend the erase sequence at a predetermined point in the erase  
algorithm. Block erase is suspended when Status Register bits SR[7,6] are set. Suspend latency is  
specified in Section 5.7, “Flash Erase and Program Timings” on page 31.  
When an erase operation has been suspended, a Word Program or Read operation can be performed  
within any block, except the block that is in an erase suspend state. An erase operation cannot be  
nested within another erase suspend operation.  
A suspended erase operation cannot resume until the nested program operation has completed.  
Read Array, Read Status Register, Clear Status Register, Read Identifier, CFI Query, Erase  
Resume, are all valid commands during Erase Suspend. Additionally, Program, Program Suspend,  
Program Resume, Lock Block, Unlock Block and Lock-Down Block are valid commands during  
Erase Suspend.  
To resume an erase suspend operation, issue the Resume command. The Resume command can be  
written to any device address. When a program operation is nested within an Erase Suspend  
operation and the Program Suspend command is issued, the device will suspend the program  
operation. When the resume command is issued, the device will resume the program operation  
first. Once the nested program operation is completed, an additional Resume command is required  
to complete the block operation.  
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Datasheet  
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