E
BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY
6.4
DC Characteristics—Commercial Temperature
2.7V V
3.3V V
CC
5V V
Test
CC
CC
Parameter
Sym
Notes Typ Max Typ Max Typ Max Unit
Conditions
I
I
I
Input Load Current
1
1
±0.5
±0.5
±0.5
±0.5
±1 µA
±10 µA
V
V
= V
= V
Max, V = V
or GND
LI
CC
CC
CC
CC
IN
CC
Output Leakage Current
Max, V
OUT
= V
or GND
CC
LO
V
Standby Current
1,3,6 20 100 20 100 25 100 µA CMOS Inputs
= V Max
CCS
CC
V
CC
CC
CE# = RP# = V
± 0.2 V
CC
0.1
2
0.2
2
0.4
2
mA TTL Inputs
= V
V
Max, CE# = RP# = V
CC IH
CC
10 µA RP# = GND ± 0.2 V
(RY/BY#) = 0 mA
I
V
Deep Power-
1
10
10
CCD
CCR
CC
I
OUT
CMOS Inputs
12 17 35 mA
Down Current
V Read Current
I
1,5,6
6
7
12
18
7
8
CC
V
= V
Max, CE# = GND
CC
f = 5 MHz (2.7 V, 3.3 V), 8 MHz (5 V)
= 0 mA
CC
I
OUT
TTL Inputs
18 20 50 mA
V
= V
Max, CE# = GND
CC
CC
f = 5 MHz (2.7 V, 3.3 V), 8 MHz (5 V)
= 0 mA
I
OUT
I
I
V
Program or
1,7
1,7
1,2
17
17
12
17
17
12
6
mA V = 3.3 V ± 0.3 V
PP
35 mA V = 5 V ± 10%
CCW
CC
Set Lock-Bit Current
PP
30 mA V = 12 V ± 5%
PP
V
Block Erase or
mA V = 3.3 V ± 0.3 V
PP
CCE
CC
Clear Block
30 mA V = 5 V ± 10%
PP
Lock-Bits Current
25 mA V = 12 V ± 5%
PP
I
I
V
Program or Block
1
1
10 mA CE# = V
CCWS CC
IH
Erase Suspend Current
CCES
PPS
I
I
I
V
V
V
Standby Current
Read Current
1
1
1
±2 ±15 ±2 ±15 ± 2 ±15 µA
10 200 10 200 10 200 µA
V
V
≤ V
PP
PP
PP
PP
PP
CC
CC
> V
PPR
PPD
Deep Power-Down
0.1
5
0.1
5
0.1
5
µA RP# = GND ± 0.2 V
Current
I
V
Program/ Set
1,7
1,7
1
40
40
15
20
20
15
mA V = 3.3 V ± 0.3 V
PP
PPW
PP
Lock-Bit Current
40 mA V = 5 V ± 10%
PP
15 mA V = 12 V ± 5%
PP
I
V
Block Erase/Clear
mA V = 3.3 V ± 0.3 V
PP
PPE
PP
Block Lock-Bits
Current
20 mA V = 5 V ± 10%
PP
15 mA V = 12 V ± 5%
PP
I
I
V
Program/ Block Erase
10 200 10 200 µA
V
= V
PP PPH1/2/3
PPWS PP
Suspend Current
PPES
31
PRELIMINARY
INTEL [ INTEL ]
