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N28F020-150 参数 Datasheet PDF下载

N28F020-150图片预览
型号: N28F020-150
PDF下载: 下载PDF文件 查看货源
内容描述: 28F020 2048K ( 256K ×8 )的CMOS FLASH MEMORY [28F020 2048K (256K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 38 页 / 877 K
品牌: INTEL [ INTEL ]
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28F020  
E
3.0 DESIGN CONSIDERATIONS  
3.3  
V
Trace on Printed Circuit  
PP  
Boards  
3.1  
Two-Line Output Control  
Programming flash memories, while they reside in  
the target system, requires that the printed circuit  
board designer pay attention to the VPP power  
supply trace. The VPP pin supplies the memory cell  
current for programming. Use similar trace widths  
and layout considerations given the VCC power bus.  
Adequate VPP supply traces and decoupling will  
decrease VPP voltage spikes and overshoots.  
Flash memories are often used in larger memory  
arrays. Intel provides two read control inputs to  
accommodate multiple memory connections. Two-  
line control provides for:  
a. the lowest possible memory power dissipation  
and,  
b. complete assurance that output bus contention  
will not occur.  
3.4  
Power-Up/Down Protection  
The 28F020 is designed to offer protection against  
accidental erasure or programming during power  
transitions. Upon power-up, the 28F020 is  
To efficiently use these two control inputs, an  
address decoder output should drive chip enable,  
while the system’s read signal controls all flash  
memories and other parallel memories. This  
assures that only enabled memory devices have  
active outputs, while deselected devices maintain  
the low power standby condition.  
indifferent as to which power supply, VPP or VCC  
,
powers up first. Power supply sequencing is not  
required. Internal circuitry in the 28F020 ensures  
that the command register is reset to the read  
mode on power-up.  
A system designer must guard against active  
writes for VCC voltages above VLKO when VPP is  
active. Since both WE# and CE# must be low for a  
command write, driving either to VIH will inhibit  
writes. The control register architecture provides an  
added level of protection since alteration of  
memory contents only occurs after successful  
completion of the two-step command sequences.  
3.2  
Power Supply Decoupling  
Flash memory power-switching characteristics  
require careful device decoupling. System  
designers are interested in three supply current  
(ICC) issues—standby, active, and transient current  
peaks produced by falling and rising edges of chip  
enable. The capacitive and inductive loads on the  
device outputs determine the magnitudes of these  
peaks.  
3.5  
28F020 Power Dissipation  
Two-line control and proper decoupling capacitor  
selection will suppress transient voltage peaks.  
When designing portable systems, designers must  
consider battery power consumption not only during  
device operation, but also for data retention during  
system idle time. Flash nonvolatility increases the  
usable battery life of your system because the  
28F020 does not consume any power to retain  
code or data when the system is off. Table 4  
illustrates the power dissipated when updating the  
28F020.  
Each device should have  
capacitor connected between VCC and VSS, and  
between VPP and VSS  
a 0.1 µF ceramic  
.
Place the high-frequency, low-inherent-inductance  
capacitors as close as possible to the devices.  
Also, for every eight devices, a 4.7 µF electrolytic  
capacitor should be placed at the array’s power  
supply connection, between VCC and VSS. The bulk  
capacitor will overcome voltage slumps caused by  
printed circuit board trace inductance, and will  
supply charge to the smaller capacitors as needed.  
16  
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