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N28F020-150 参数 Datasheet PDF下载

N28F020-150图片预览
型号: N28F020-150
PDF下载: 下载PDF文件 查看货源
内容描述: 28F020 2048K ( 256K ×8 )的CMOS FLASH MEMORY [28F020 2048K (256K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 38 页 / 877 K
品牌: INTEL [ INTEL ]
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28F020  
E
The 28F020 contains an intelligent identifier  
operation to supplement traditional PROM-  
programming methodology. The operation is  
initiated by writing 90H into the command register.  
Following the command Write, a read cycle from  
address 0000H retrieves the manufacturer code of  
89H. A read cycle from address 0001H returns the  
device code of BDH. To terminate the operation, it  
is necessary to write another valid command into  
the register.  
In the case where the data read is not FFH,  
another erase operation is performed. (Refer to  
Section 2.2.2.3, Set-Up Erase/Erase Commands.)  
Verification then resumes from the address of the  
last verified byte. Once all bytes in the array have  
been verified, the erase step is complete. The  
device can be programmed. At this point, the verify  
operation is terminated by writing a valid command  
(e.g., Program Set-Up) to the command register.  
Figure 5, the 28F020 Quick-Erase Algorithm  
flowchart, illustrates how commands and bus  
operations are combined to perform electrical  
erasure of the 28F020. Refer to AC  
Characteristics—Write/Erase/Program Only Oper-  
ations and waveforms for specific timing  
parameters.  
2.2.2.3  
Set-Up Erase/Erase Commands  
Set-Up Erase is a command-only operation that  
stages the device for electrical erasure of all bytes  
in the array. The set-up erase operation is  
performed by writing 20H to the command register.  
2.2.2.5  
Set-Up Program/Program  
Commands  
To commence chip-erasure, the Erase command  
(20H) must again be written to the register. The  
erase operation begins with the rising edge of the  
WE# pulse and terminates with the rising edge of  
the next WE# pulse (i.e., Erase Verify command).  
Set-Up program is a command-only operation that  
stages the device for byte programming. Writing  
40H into the command register performs the set-up  
operation.  
This two-step sequence of set-up followed by  
execution ensures that memory contents are not  
accidentally erased. Also, chip-erasure can only  
occur when high voltage is applied to the VPP pin.  
In the absence of this high voltage, memory  
contents are protected against erasure. Refer to  
AC Characteristics—Write/Erase/Program Only  
Operations and waveforms for specific timing  
parameters.  
Once the program set-up operation is performed,  
the next WE# pulse causes a transition to an active  
programming operation. Addresses are internally  
latched on the falling edge of the WE# pulse. Data  
is internally latched on the rising edge of the WE#  
pulse. The rising edge of WE# also begins the  
programming  
operation.  
The  
programming  
operation terminates with the next rising edge of  
WE# used to write the Program Verify command.  
Refer to AC Characteristics—Write/Erase/Program  
Only Operations and waveforms for specific timing  
parameters.  
2.2.2.4  
Erase Verify Command  
The Erase command erases all bytes of the array  
in parallel. After each erase operation, all bytes  
must be verified. The erase verify operation is  
initiated by writing A0H into the command register.  
The address for the byte to be verified must be  
supplied as it is latched on the falling edge of the  
WE# pulse. The register write terminates the erase  
operation with the rising edge of its WE# pulse.  
2.2.2.6  
Program Verify Command  
The 28F020 is programmed on a byte-by-byte  
basis. Byte programming may occur sequentially or  
at random. Following each programming operation,  
the byte just programmed must be verified.  
The program verify operation is initiated by writing  
C0H into the command register. The register write  
terminates the programming operation with the  
rising edge of its WE# pulse. The program verify  
operation stages the device for verification of the  
byte last programmed. No new address information  
is latched.  
The 28F020 applies an internally-generated margin  
voltage to the addressed byte. Reading FFH from  
the addressed byte indicates that all bits in the byte  
are erased.  
The Erase Verify command must be written to the  
command register prior to each byte verification to  
latch its address. The process continues for each  
byte in the array until a byte does not return FFH  
data, or the last address is accessed.  
The 28F020 applies an internally-generated margin  
voltage to the byte. A microprocessor read cycle  
outputs the data.  
A
successful comparison  
12  
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