E
28F020
Start Erasure (4)
Bus
Operation
Command
Comments
Y
Entire Memory Must = 00H
Before Erasure
Data = 00H?
N
Use Quick-Pulse
Programming Algorithm
(Figure 4)
Program All
Bytes to 00H
(1)
(1)
Standby
Wait for VPP Ramp to VPPH
Apply VPPH
ADDR = 00H
PLSCNT = 0
Initialize Addresses and
Pulse-Count
Write Erase
Set-Up Cmd
Set-Up
Erase
Write
Write
Data = 20H
Data = 20H
Erase
Write Erase Cmd
Duration of Erase Operation
(tWHWH2
Stand-by
Time Out 10 ms
)
Addr = Byte to Verify;
Erase (2)
Verify
Write Erase
Verify Cmd
Write
Data = A0H; Stops Erase
(3)
Operation
Standby
Read
tWHGL
Time Out 6 µs
Read Data
Read Byte to Verify Erasure
from Device
N
Inc
N
Data = FFH?
Y
PLSCNT =
1000?
Compare Output to FFH
Increment Pulse-Count
Standby
Y
N
Increment Addr
Last Address?
Data = 00H, Resets the
Register for Read Operations
Write
Read
Y
Write Read Cmd
(1)
Standby
Wait for VPP Ramp to VPPL
(1)
(1)
Apply VPPL
Apply VPPL
Erasure
Completed
Erase Error
0245_05
NOTES:
1. See DC Characteristics for the value of VPPH and VPPL
.
2. Erase Verify is performed only after chip-erasure. A final read/compare may be performed (optional) after the register is
written with the Read command.
3. Refer of Principles of Operation.
4. Caution: The algorithm must be followed to ensure proper and reliable operation of the device.
Figure 5. 28F020 Quick-Erase Algorithm
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